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MwT- 7

26 GHz Medium Power GaAs FET

 


MwT-7 Nonlinear Model

image001.gif (2894 bytes) Note:
1. MwT-7 is a MESFET with 0.3uM refractory metal/gold gate length and 250uM gate width.  It is a high gain and medium power device with operating range from 0.5 to 18 GHz.
2. The models are based on one die in a typical wafer.  It is periodically updated to reflect a more current wafer.  Your results might be slightly different if you use a wafer that is not from the sample used.


                   DC PARAMETERS

SYMBOL

 UNITS VALUE DESCRIPTION
VBI V 0.8 BUILD-IN GATE POTENTIAL
VBR V -12 GATE-DRAIN BREAKDOWN
N 1.22 GATE JUNCTION IDEALITY FACTOR
IS pA 8.0 GATE JUNCTION REVERSE SATURATION CURRENT



                  CURTICE-ETTENBERG MODEL

SYMBOL

 UNITS VALUE DESCRIPTION
A0 A 0.0690 CUBIC FIT IDS EQUATION COEFFICIENT
A1 A/V 0.0999 CUBIC FIT IDS EQUATION COEFFICIENT
A2 A/(V*V) 0.0359 CUBIC FIT IDS EQUATION COEFFICIENT
A3 A/(V*V*V) 0.0000 CUBIC FIT IDS EQUATION COEFFICIENT
BETA 1/V 0.0667 COEFFICIENT FOR PINCH-OFF CHANGE WITH RESPECT TO VDS
GAMMA 1/V 1.6895 HYPERBOLIC TANGENT FUNCTION PARAMETER
VDSO V 2.0716 VDS AT WHICH A0, A1, A2 AND A3 WERE EVALUATED
CGSO PF 0.5204 ZERO BIAS GATE-SOURCE CAPACITANCE
CGDO PF 0.0239 ZERO BIAS GATE DRAIN CAPACITANCE
VTO V -1.3209 PINCH-OFF VOLTAGE

            

             TRIQUINT MODEL
SYMBOL UNITS VALUE DESCRIPTION
ALPHA 1/V 2.1307 SLOPE OF DRAIN CHARACTERISTIC IN THE LINEAR REGION
BETA A/(V*V) 0.0367 TRANSCONDUCTANCE COEFFICIENT
GAMMA 0.1052 SLOPE PARAMETER OF PINCH-OFF VOLTAGE
DELTA 1/(A*V) 1.0202 SLOPE OF DRAIN CHARACTERISTIC IN THE SATURATED REGION
Q 2.1058 POWER LAW PARAMETER
VTO V -1.1778 PINCH-OFF VOLTAGE
CGSO PF 0.5411 ZERO BIAS GATE-SOURCE CAPACITANCE
CDSO PF 0.02555 ZERO BIAS GATE-DRAIN CAPACITANCE