MwT GaAs Fet Selection Guide

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[Click to view PDF File] 2013-2014 Product Selection Guide
[Click to view PDF File] MwT Product Standard Lead Times
[Click to view PDF File] RoHS Compliance

[Click to view PDF File] ISO 9001:2008 Certificate
Contact Factory for Custom Product and Development
Request Quotation or Samples


APPLICATION NOTES AND SCREENING DOWNLOADS
[Click to view PDF File] MwT GaAs Device Technology.
[Click to view PDF File] MwT-7 Replaces NEC710 Tech Note.
[Click to view PDF File] Evaluation of the Effects of Hydrogen on MwT Fets.
[Click to view PDF File] Package Application Notes (70, 71, 73).  Some products also available in NEW SOT89 package.
[Click to view PDF File] Visual Level 1 Criteria - Commercial Applications.
[Click to view PDF File] Visual Level 3 Criteria - Military Standard Applications.
[Click to view PDF File] Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
[Click to view PDF File] MwT-LP7 Low Phase Noise Application Notes for DRO Applications
[Click to view PDF File] MwT Standard Wafer Evaluation Procedure
[Click to view PDF File] MwT-1789HL Application Note
[Click to view PDF File] MwT-1789LN Application Note
[Click to view PDF File] MwT-17Q3 Application Note
MTBF Plot For MwT GaAs Fets
Bias Application Note for MwT-LN180 and MwT-LN240 NEW

GaAs FETs / pHEMTs RF Properties (Typical performance at 25C)
(DC Properties Listed On Page 2)

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Ultra Linear, High Dynamic Range, Low Phase Noise

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GaAs Process is Approved for Space Applications with Proven Reliability

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Commercial, Industrial, Military, and Space Grade

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100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534

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100% Die Probe Test with Data Recorded for Shipment

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100% Visual Performed (Level 1, 3, or 4) before Shipment

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100% Idss Match to Provide Performance Consistency

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RF Sample Test Capability Available Upon Request

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Standard and Custom Device Specifications

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High-Rel and Space-Rel Screening Options Available

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RoHS (lead-free) Compliant Product Available

New Low Noise pHEMT Devices:
 
  Model Gate NF NF Ga @ Ga @ P-1dB
    Width / @12GHz  @4GHz   N.F  N.F
    Length Typ Typ @12GHz  @4GHz  12GHz
 S-Para       Typ/Min Typ Typ
New um dB dB dB dB dBm
MwT-LN180 180/.15 0.50 0.20 10 / -- 14.5 16.0
MwT-LN240 240/.15 0.50 0.20 10 / -- 13.0 16.0
MwT-LN300 300/.15 0.60 0.20 10 / -- 13.0 16.0
MwT-LN600 600/.15 0.50 0.20 9 / 8 12.0 20.0

pHEMT MM-Wave Applications and Power pHEMT Devices:
The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
    Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
    Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size  
  New Product Hermetic     Bond Pads & VIA Hole     Typ/Min Typ/Min Typ    
 S-Para   um   Qty mil, y/n dB dB dB dBm dBm um um  
MwT-PH4 70, 73 / 71 180/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 1.2 13.0/12.0 20.0/18.0 - 356 241 Osc & Amp
MwT-PH5 - 300/0.3 single stripe 1, 1, 2 4, no 18.0 / 15.0 2.0 / - 12.0/ - 20.0/18.0 - 406 241 Power Amp
  MwT-PH7 70, 73 / 71 250/0.3 single stripe 2, 1, 2 4, no 13.5 / 12.0 - - 24.0/22.0 - 356 241 Medium pow
MwT-PH8 71 1200/0.3 Interdigit 2, 2, 3 4, no 10.0 / 9.0 - - 30.0/29.0 - 673 305 Medium pow
  MwT-PH9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 4, no 10.0 / 9.0 - - 27.0/26.0 - 419 292 Power Amp
  MwT-PH11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 - - 32.0/30.0 42 775 343 Power Amp
MwT-PH15 70, 73 / 71 630/0.3 single stripe 3, 2, 5 4, no 12.0 / 10.0 - - 28.5/27.0 - 775 241 Medium pow
MwT-PH16 71 900/0.3 single stripe 6, 2, 7 4, no 11.5 / 10.0 - - 30.0/28.5 - 1067 241 Medium pow
MwT-PH16A - 1600/0.25 Interdigit 4, 4, 5 4, no 11.0 / 9.5 - - 31.0 / 29.0 - 1126 330 Medium pow

High-Power, High-Linearity Applications:
Ideal for commercial, military, hi-rel space applications.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
    Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
    Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size  
  New Product Hermetic     Bond Pads & VIA Hole     Typ/Min Typ/Min Typ    
 S-Para   um   Qty mil, y/n dB dB dB dBm dBm um um  
MwT-11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 - - 30.0/28.0 - 775 343 Power Amp
MwT-17Q3 QFN 2400/0.8 Interdigit 4, 4, 5 4, no 18.0/16.0 (1) 1.5 (1) - 28.0/27.0 46 1130 279 Power Amp

Broad-Band, Low Noise Figure:
Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
    Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
    Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size  
  New Product Hermetic     Bond Pads & VIA Hole     Typ/Min Typ/Min Typ    
 S-Para   um   Qty mil, y/n dB dB dB dBm dBm um um  
  MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 - 356 241 Osc & Amp
  MwT-7
  Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 - 356 241 BA/SE Amp
  MwT-LP7 70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 - 356 241 Oscillator
  MwT-A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 - 419 292 FB Amp
  MwT-A989 sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) - 25.0/23.0 40 419 292 Power Amp
MwT-A989SB sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) - 25.0/23.0 40 419 292 Power Amp

Broad-Band, High Gain:
Recommended for multi-octave applications where maximum gain is the driving parameter.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
  Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
  Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size
  New Product Hermetic Bond Pads & VIA Hole Typ/Min Typ/Min Typ
 S-Para um Qty mil, y/n dB dB dB dBm dBm um um
  MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0/23.0 - 775 241 FB Amp
  MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0/20.0 - 406 241 BA Amp
  MwT-5 NA / NA 2300/0.3 dual gate 3, 1, 2 5, no 13.0 / 12.0 3.5 / - 11.0 / - 19.0/15.0 - 406 241 Buffer Amp
  MwT-7
 Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 - 356 241 BA/SE Amp

Broad-Band, Medium Power:
The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
    Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
    Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size  
  New Product Hermetic     Bond Pads & VIA Hole     Typ/Min Typ/Min Typ    
 S-Para   um   Qty mil, y/n dB dB dB dBm dBm um um  
  MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0/23.0 - 775 241 FB Amp
  MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0 - 775 241 BA Amp
  MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0/20.0 - 406 241 BA Amp
  MwT-6 - / 71 900/0.3 Interdigit 2, 2, 3 5, no 8.0 / 7.5 - / - - / - 27.0/26.0 - 559 292 FB/DA Amp
  MwT-7
 Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 - 356 241 BA/SE Amp
  MwT-8 71 2400/0.3 Interdigit 2, 2, 3 4, no 7.5 / 7.0 - - 28.0/27.0 - 673 305 Power Amp
  MwT-9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 5, no 9.0 / 8.0 - / - - / - 26.0/25.0 - 419 292 FB Amp
  MwT-15 - / - 630/0.3 single stripe 4, 2, 5 5, no 9.5 / 8.5 - / - - / - 25.0/23.0 - 775 241 Amplifier
  MwT-16 - / - 900/0.3 single stripe 6, 2, 7 5, no 8.5 / 7.5 - / - - / - 27.0/26.0 - 1067 241 BA Amp
  MwT-17
 Nonlinear Model
89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2) - 29.5/28.5 45/- 1130 279 BA/FB Amp
  MwT-1789HL sot89 2400/0.8 Interdigit  4, 4, 5 4, no -- (3) 14.0 (1) 28.0 46 1130 279 High Linearity
  MwT-1789LN sot89 2400/0.8 Interdigit  4, 4, 5 4, no -- (4) 16.0 (1) 28.0 46 1130 279 Low Noise
  MwT-1789SB sot89 2400/0.8 Interdigit  4, 4, 5 4, no -- (3) 18.0 (1) 28.0 44 1130 279 Power Amp

Narrow-Band Power Applications:
Recommended for narrow-band applications where maximum power output and gain are the driving parameters.  These devices can be biased at 5 volts for wireless communications applications.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
  Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
  Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size
  New Product Hermetic Bond Pads & VIA Hole Typ/Min Typ/Min Typ
 S-Para um Qty mil, y/n dB dB dB dBm dBm um um
  MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0 - 775 241 BA Amp
  MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0/20.0 - 406 241 BA Amp
  MwT-6 - / 71 900/0.3 Interdigit 2, 2, 3 5, no 8.0 / 7.5 - / - - / - 27.0/26.0 - 559 292 FB/DA Amp
  MwT-8 71 2400/0.3 Interdigit 2, 2, 3 4, no 7.5 / 7.0 - - 28.0/27.0 - 673 305 Power Amp
  MwT-9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 5, no 9.0 / 8.0 - / - - / - 26.0/25.0 - 419 292 FB Amp
  MwT-17
 Nonlinear Model
89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2) - 29.5/28.5 45/- 1130 279 BA/FB Amp

Narrow-Band, Low Noise Applications:
Recommended for narrow-band applications where low noise and gain are the driving parameters.  These devices can be biased at 5 volts for wireless communications applications.
  Model Package Gate Gate  Gate Chip  S.S. Gain N. F. Ga @ P-1dB IP3 Nominal Ideal
  Available Width / Layout Drain Thick- @12GHz  @12GHz   N.F Chip  Circuit
  Sealed /  Length Method Source ness Typ/Min Typ/Max @12GHz  12GHz 12GHz Size
  New Product Hermetic     Bond Pads & VIA Hole     Typ/Min Typ/Min Typ    
 S-Para um Qty mil, y/n dB dB dB dBm dBm um um
  MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0/23.0 - 775 241 FB Amp
  MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 - 356 241 Osc & Amp
  MwT-A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 - 419 292 FB Amp
  MwT-A989 sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) - 25.0/23.0 40 419 292 Power Amp
MwT-A989SB sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) - 25.0/23.0 40 419 292 Power Amp

SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz
(DC Properties Listed On Page 2)

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