MwT-LP7 Ultra - Low Phase Noise device up to 31 GHz

< back

pages: 1 - 2

MwT-LP7

Ultra - Low Phase Noise device up to 31 GHz

MwT-LP7 DUAL BIAS	MwT-LP7 Optional Bonding

SAFE OPERATING LIMITS
vs. BACKSIDE CHIP

7temp.gif (11962 bytes)

Absolute Maximum
Continuous Maximum

MAXIMUM RATINGS AT Ta = 25°C

	Notes:
1.	Exceeding any one of these limits in continuous operation may reduce the mean-time-to-failure below the design goals.
2.	Exceeding any one of these limits may cause permanent damage.

Symbol	Parameter	Units	Cont Max1	Absolute Max1
VDS	Drain to Source Volt.	V	See Safe Oper. Limits
Tch	Channel Temperature	°C	+150	+175
Tst	Storage Temperature	°C	-65 to+150	+175
Pin	RF Input Power	mW	80	120

TYPICAL NOISE PARAMETERS

NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY

Frequency GHz	NF MIN dB	Gamma OPT MAG ANGLE		Rn/50
2.00	0.326	0.858	19.11	0.484
4.00	0.6	0.726	38.47	0.411
6.00	0.858	0.623	58.31	0.375
8.00	1.33	0.51	98.59	0.330
12.00	1.55	0.493	117.7	0.313
16.00	1.96	0.508	150.4	0.286

7nf.gif (13173 bytes)

BIN SELECTION

BIN#	4	5	6	7	8	9	10	11	12	13	14	15	16	17	18
IDSS (mA)	38- 42	42- 46	46- 50	50- 54	54- 58	58- 62	62- 66	66- 70	70- 74	74- 78	78- 82	82- 86	86- 90	90- 94	94- 98

BIN ACCURACY STATEMENT

When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required. For details of BIN Selection and Safe Handling Procedure please see supplementary information in available PDF format by clicking here.

back to selection guide

pages: 1 - 2

• Home • New Products • Products • About MwT • Quality System • Sales Reps • Employment • Articles and Ads • Press Releases • Download Catalog • Request Literature • Quote/Sample Form • Contact MwT •