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APPLICATION NOTES AND SCREENING DOWNLOADS
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MwT GaAs Device
Technology.
MwT-7 Replaces
NEC710 Tech Note.
Evaluation of the
Effects of Hydrogen on MwT Fets.
Package Application Notes (70, 71, 73). Some products also available in NEW SOT89 package.
Visual Level 1 Criteria - Commercial Applications.
Visual Level 3 Criteria - Military Standard Applications.
Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
MwT-LP7 Low Phase Noise Application Notes for DRO Applications
MwT Standard Wafer Evaluation Procedure
MwT-1789HL Application Note
MwT-1789LN Application Note
MwT-17Q3 Application Note
MTBF Plot
For MwT GaAs Fets
GaAs FETs / PHEMTs RF Properties
(Typical performance at 25°C)
(DC Properties Listed On Page 2)
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Ultra Linear, High Dynamic Range, Low
Phase Noise |
|
GaAs Process is Approved for Space
Applications with Proven Reliability |
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Commercial, Industrial, Military, and
Space Grade |
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100% Wafer Bond Pull, Die Shear, Wafer
DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534 |
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100% Die Probe Test with Data Recorded
for Shipment |
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100% Visual Performed (Level 1, 3, or
4) before Shipment |
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100% Idss Match to Provide Performance
Consistency |
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RF Sample Test Capability Available
Upon Request |
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Standard and Custom Device
Specifications |
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High-Rel and Space-Rel Screening
Options Available |
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RoHS (lead-free) Compliant Product
Available |
|
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PHEMT MM-Wave Applications
and Power PHEMT Devices:
The following are AlGaAs/InGaAs heterojunction PHEMT
(Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power
and gain applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N. F. |
Ga @ |
P-1dB |
IP3 |
Nominal |
Ideal |
| |
|
Available |
Width / |
Layout |
Drain |
Thick- |
@12GHz |
@12GHz |
N.F |
@ |
@ |
Chip |
Circuit |
| |
|
Sealed / |
Length |
Method |
Source |
ness |
Typ/Min |
Typ/Max |
@12GHz |
12GHz |
12GHz |
Size |
|
 |
New
Product |
Hermetic |
|
|
Bond Pads |
& VIA Hole |
|
|
Typ/Min |
Typ/Min |
Typ |
|
|
 |
S-Para |
|
um |
|
Qty |
mil, y/n |
dB |
dB |
dB |
dBm |
dBm |
um um |
|
|
|
MwT-PH5 |
- |
300/0.3 |
single stripe |
1, 1, 2 |
4, no |
18.0 / 15.0 |
2.0 / - |
12.0 / - |
20.0 / 18.0 |
- |
406 241 |
Power Amp |
| |
MwT-PH7
|
70, 73 / 71 |
250/0.3 |
single stripe |
2, 1, 2 |
4, no |
13.5 / 12.0 |
- |
- |
24.0/22.0 |
- |
356 241 |
Medium pow |
|
|
MwT-PH8 |
71 |
1200/0.3 |
Interdigit |
2, 2, 3 |
4, no |
10.0 / 9.0 |
- |
- |
30.0/29.0 |
- |
673 305 |
Medium pow |
| |
MwT-PH9 |
70, 73 / 71 |
750/0.3 |
single stripe |
1, 1, 2 |
4, no |
10.0 / 9.0 |
- |
- |
27.0/26.0 |
- |
419 292 |
Power Amp |
| |
MwT-PH11 |
71 |
2400/0.3 |
Interdigit |
2, 2, 3 |
4, no |
9.0 / 7.0 |
- |
- |
32.0/30.0 |
42 |
775 343 |
Power Amp |
|
|
MwT-PH15 |
70, 73 / 71 |
630/0.3 |
single stripe |
3, 2, 5 |
4, no |
12.0 / 10.0 |
- |
- |
28.5/27.0 |
- |
775 241 |
Medium pow |
|
|
MwT-PH15QACSB |
QFN |
630/0.3 |
single stripe |
3, 2, 5 |
4, no |
11.0 / - |
- |
- |
25.0 / - |
- |
775 241 |
Medium pow |
|
|
MwT-PH16 |
71 |
900/0.3 |
single stripe |
6, 2, 7 |
4, no |
11.5 / 10.0 |
- |
- |
30.0/28.5 |
- |
1067 241 |
Medium pow |
|
|
MwT-PH16A |
- |
1600/0.25 |
Interdigit |
4, 4, 5 |
4, no |
11.0 / 9.5 |
- |
- |
31.0 / 29.0 |
- |
1126 330 |
Medium pow |
High-Power, High-Linearity Applications:
Ideal for
commercial, military, hi-rel space applications.
| |
Model |
Package |
Gate |
Gate |
Gate |
Chip |
S.S. Gain |
N | |
