MPS-013001-84 Page 1 100 to 3000 Variable Gain Amplifier

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MPS-013001-84

100 to 3000 MHz Variable Gain Amplifier

MPS-013001-84 Product Photo

Features:

High IP3 +34 dBm Typical	+5 Volt Bias
High P1dB +21 dBm Typical	30% High Power Added Effeciency
Variable Gain

The MPS-013001-84 is an internally matched GaAs FET amplifier in a surface mount ceramic package. It is ideal for digital communications applications where excellent gain linearity and high efficiency at a 5 Volt bias is required. The device may be directly soldered to a 50 ohm microstrip circuit without additional matching elements. Independent biasing of the gate allows external gain control or the amplifier may be operated with no gate bias.

	Specifications
	Electrical at 25°C, Vdd = 5.0 V, Zo = 50 ohms

SYMBOL	PARAMETERS	Min	Typical	Max	Unit
Freq.	Frequency Range	100		3000	MHz
SSG	Small Signal Gain	10.5	11.5		dB
P1 dB	P out at 1 dB Compression Point	+19.0	+21.0		dBm
IP3	Third-Order Intercept		+34.0		dBm
VSWR	Input/Output VSWR		1.6:1	2.5:1
GOF	Gain Variation over Frequency		ą 0.8	ą1.2	dB
GOT	Gain Variation over Temperature		-.008		dB/°C
Idd	DC Current		90	160	mA
PAE	Power Added Effiency		30		%
NF	Noise Figure (>500MHz/< or = 500 MHz)		3.5/4.5	5.0/6.5	dB

013001_84_2.gif (2368 bytes)

Absolute Maximum Ratings

Maximum Bias Voltage	6.0 V
Maximum continuous RF Input Power	200 mW
Maximum Peak Input Power	300 mW
Maximum Case Operating Temperature	+ 85 °C
Maximum Storage Temperature	- 65 °C to + 150 °C

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