MPS-080917N-82 Page 1 870 to 925 Low Noise Receiver Amplifier

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MPS-080917N-82

870 to 925 MHz Low Noise Receiver Amplifier

MPS-080917N-82 Product Photo

Features:

Very Low Noise 0.8 dB Typ.	7.5 Volt Bias
High +36 dBm Typ. IP3	26% High Power Added Efficiency
13.5 dB Typical Gain

The MPS-080917N-82 is a low noise, high dynamic range amplifier designed for ultralinear GSM, NMT-900 and ETACS receiver applications. The circuit is matched to 50 ohm and employs a single stage GaAs FET with internal matching to provide an exceptional noise figure, 0.8 dB, combined with an extremely high IP3, +36 dBm. Typical applications are cellular base station receivers, Tower mounted LNA's, smart antenna systems, picocell repeaters and receiver multi-couplers.

	Specifications
	Electrical at 25°C, Vdd = 7.5 V, Zo = 50 ohms

SYMBOL	PARAMETERS	Min	Typical	Max	Unit
Freq.	Frequency Range	870		925	MHz
SSG	Small Signal Gain	12	13.5		dB
P1 dB	P out at 1 dB Compression Point		+23.0		dBm
IP3	Third-Order Intercept	+33.0	+36.0		dBm
NF	Noise Figure		0.8	1.0	dB
VSWR	Input/Output VSWR		2.0:1	2.5:1
GOF	Gain Variation over Frequency		ą 0.20	ą0.50	dB
GOT	Gain Variation over Temperature		ą0.15		dB/°C
Idd	DC Current		180	250	mA
PAE	Power Added Efficiency		26		%

080917N_82_1.gif (2337 bytes)

080917N_82_2.gif (2368 bytes)

Absolute Maximum Ratings

Maximum Bias Voltage	8.0 V
Maximum continuous RF Input Power	950 mW
Maximum Peak Input Power	1400 mW
Maximum Case Operating Temperature	+ 85 °C
Maximum Storage Temperature	- 65 °C to + 150 °C

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