MwT’s two new “amplifiers
MPS-032701A-82 and
MPS-0425A9D-82" are ideally
suited for those applications that require medium power, high-gain, and
high linearity. The
MPS-032701A-82 operates from 300 MHz to 2700 MHz and
the MPS-0425A9D-82 operates from 400 MHz to 2500 MHz.
The
WPS-495922-02
operates over 4.9 to 5.9GHz band with 11dB gain and 32dBm output power at
1dB compression point. Based on MwT’s proprietary high linearity MESFET
technology, the Power Amplifier achieves superior Error Vector Magnitude (EVM)
performance of 2.5% at 26dBm output power level under WiMax test signal (256
carriers and 64 QAM with 2/3 coding factor). The EVM performance also
includes 1.6% of accumulated errors from the modulator and driver stages.
The adjacent channel power ratio, ACPR, is less than –40dBc at 25dBm average
output power and the third-order intercept point, IP3, is as high as 47dBm
at 22dBm output power per tone.
WPS-495922-02 is pre-matched to 50 Ohms for
easy cascade. The PA is biased at 7.5V drain voltage and about 600mA direct
current. The
WPS-495922-02 is packaged in MwT 02 package, a low cost surface
mount LLC package. The package is lead free and has a proprietary copper
alloy based pallet for good thermal conductivity.
The MwT Power PHEMT AlGaAs/InGaAs
PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) devices, MwT-PH7, MwT-PH15, MwT-PH16 are ideally suited
for applications requiring high-gain and medium power up to 28 GHz
frequency range. These devices are equally effective for either wideband
(e.g. 6 to 18 GHz) or narrow-band applications. The chips are produced
using MwT's reliable metal systems and all devices from each wafer are
screened to insure reliability. All chips are passivated using MwT's
patented "Diamond-Like Carbon" process for increased durability.
The MwT-GK Gunn Diode is targeted at
CW and pulsed K-band (18-26.5 GHz) frequency source applications.
Typical Applications for this device include Motion Detection and
Surveillance, Microwave Transmitter and Receiver, Military Radar, Gunn Diode
Oscillators and Radar Detectors.
The MPS-0425A9D-82 is a
high linearity modular amplifier designed to meet the ultra-linear
transmitter driver requirements for commercial AMPS, IS-54 and GSM base
stations. Key advantages are low intermodulation performance for
multi-carrier or wideband CDMA systems and exceptionally low input/output
return loss for ease of integration.
The MPS-002701-84 is an
internally matched GaAs FET amplifier in a surface mount ceramic package. It
is ideal for digital communications applications where excellent gain
linearity and high efficiency at a 5 Volt bias is required. The device may
be directly soldered to a 50 ohm microstrip circuit without additional
matching elements.
New Distributed Amplifier Module
The MwT-0218 S/Z-7P1
amplifier module is an ideal building block for broadband(2-18 GHz), medium
power (+21 dBm) microwave assemblies and amplifiers. The miniature drop-in
design with low VSWR characteristics makes it convenient to integrate
mechanically and easy to cascade electrically. This module requires only a
single DC voltage.
New
Ultra Linear
Amplifiers
The ULA-808-82 and
ULA-818-82 are modular
amplifiers designed to meet the ultralinear transmitter output requirements
of worldwide wireless base station systems. The amplifiers exhibit an
extremely high IP3 (+48 dBm). The devices are self contained with all
matching and bias circuitry included. Typical applications for these devices
include driver stages for single channel and multicarrier feed forward
linear amplifiers. They are also useful for a lower power micro-cell
amplifier output stage where excellent multitone intermodulation performance
is required.
Some applications for the ULA-818-82 device are:
CDMA, TDMA, GSM, GPRS, EDGE, cdma2000.
Some applications for the ULA-808-82device are: CDMA, TDMA, GSM, GPRS, EDGE, UMTS,
WCDMA, cdma2000, TD-SCDMA.
New GaAs
MESFET Chips
Released February 2002
GaAs MESFET with extremely low phase noise suitable for very clean and stable high
frequency sources at 10 GHz and beyond. Applications include LMDS, point-to-point
high data rate transceivers and 10 Gbps OC-192 fiber optic drivers.
MwT-LP7 MESFET:
MwT-LP7 is a 250 um wide GaAs
MESFET having the same outline of the popular MwT-7 and using a newly developed low phase
noise process. Extremely low phase noise is achieved by minimizing the physical
sources of phase noise. Phase noise power density as low as 118 dBc/Hz at 100 KHz
offset has been repeatedly achieved for DRO oscillators at 17.5 GHz or higher.
Moreover, unlike oscillators built with silicon or SiGe bipolar transistors, the DRO's
using MwT-LP7 devices can achieve high output power ranging from 15 to 18 dBm at 17 to 21
GHz. MwT-LP7 is also available in our "70" and "73"
packages.
MwT-LP7 Please see the data sheet for the
detailed specifications and phase noise plot for a 17.5 GHz DRO oscillator.
New Packages
MwT's popular MPS series are now available in this low cost, thermally efficient
surface mounting package offering improved performance at lower cost.
A new range of competitively priced, ultra-linear driver amplifiers in three models
800 - 960 MHz,1800 - 2000 MHz &
2100 - 2500 MHz. These RFIC devices
feature output powers of +24 P1 dBm but with IP3 of +42 dBm and better than 18 dB return
loss for simple circuit integration.
Available
in our new 82 surface mount package, thermal performance is excellent, providing
exceptional reliability.
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