Gunn Diodes

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PRESS RELEASE           

Contact: Don Apte

MicroWave Technology Inc.
An IXYS Company

4268 Solar Way
Fremont, CA 94538
Phone: +1 (510) 651 6700   Fax: +1 (510) 651 2208

Fremont, Calif., July 1,2004  Microwave Technology Inc., An IXYS Company,  (NASDAQ:SYXI), announced that it is adding a line of Gunn Diode Products.

The first of these products is the MwT-GK, K-Band 18-26.5 GHz Gunn Diode.

It is available in both chip and in microwave ceramic packages.  This product is based on MwT proprietary epitaxial profile design and process technology.  This product is fabricated at MwT GaAs fab using process technologies that have proven reliability for both commercial and hi-rel / space applications. The MwT-GK has high output power of 13 dbm and excellent chirp performance in pulse mode applications. This Gunn Diode is designed for both CW and pulsed mode K-band frequency source applications. It also has excellent low phase noise characteristics.

Typical customer applications include:

Motion Detection and Surveillance
Microwave Transmitters and Receivers
Military Radar Systems
Gunn Diode Oscillators
Radar Detectors
Microwave Radio Links
Instrumentation

The MwT-GK series of Gunn Diodes are competitively priced and are available from stock up to 10K pieces. Contact factory for a price quote.  Other frequencies such as X band are also available contact factory for more information. For a complete listing of MwT products please go to MwT web site www.mwtinc.com. For more information send e-mail to thunt@mwtinc.com.

                                    

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