GaAs FETs / pHEMTs DC Properties (Typical performance at 25°C)

pHEMT MM-Wave Applications and Power pHEMT Devices

The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-PH4 pHEMT 18 / 66   2.5 / 0.0 56 / 36 3.0 / 1.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 210
MwT-PH5 pHEMT 40 / 120   2.5 / 0.0 60 / 40 3.0 / 2.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 13.0 / 10.0 7.0 150
MwT-PH7 pHEMT 50 / 122 4 2.5 / 0.0 80 / 50 3.0 / 1.0 1.2 / 2.5 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 150
MwT-PH8 pHEMT 240 / 600 20 2.5 / 0.0 320 / 240 3.0 / 8.0 1.2 / 2.5 1.2 12.0 / 6.0 1.2 13.0 / 10.0

8.0

40
MwT-PH9 pHEMT 120 / 292   2.5 / 0.0 200 / 150 3.0 / 5.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 56
MwT-PH11 pHEMT 440 / 800   2.0 / 0.0 800 / 450 3.0 / 16.0 1.2 / 2.5 2.4 12.0 / 6.0 2.4 13.0 / 10.0 8.0 24
MwT-PH15 pHEMT 120 / 240 10 2.5 / 0.0 200 / 130 3.0 / 2.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 65
MwT-PH16 pHEMT 150 / 360 15 2.5 / 0.0 280 / 180 3.0 / 3.0 1.2 / 2.5 1.0 12.0 / 6.0 1.0 13.0 / 10.0 8.0 45
MwT-PH16A pHEMT 300 / 600 50 2.0 / 0.0 400 / 300 3.0 / 2.0 1.2 / 2.5 2.0 8.0 / 6.0 2.0 13.0 / 10.0 9.0 30

High-Power, High-Linearity Applications

Ideal for commercial, military, hi-rel space applications.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT- 11 MESFET 240 / 920 40 2.5 / 0.0 380 / 290 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 8.0 2.4 12.0 / 8.0 8.0 28

MwT-17Q3

MESFET 440 / 680   2.5 / 0.0 380 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 35

MwT-22Q4

MESFET 800 / 1200   2.5 / 0.0 650 3.0 / 30.5 2.0 / 5.0 5.0 12.0 / 8.0 5.0 14.0 / 12.0 9.0 12

Broad-Band, Low Noise Figure

Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-4 MESFET 18 / 66 3 3.0 / 0.0 35 / 27 3.0 / 1.0 1.5 / 4.0 0.2 8.0 / 5.0 0.2 8.0 / 6.0 6.0 250
MwT-7
Nonlinear Model
MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180
MwT-LP7 MESFET 38 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180
MwT-A9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 1..0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 70
MwT-A989 MESFET 100 / 200   2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75
MwT-A989SB MESFET 100 / 200   2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75

Broad-Band, High Gain

Recommended for multi-octave applications where maximum gain is the driving parameter.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0 2.0 / 5.0 0.2 12.0 / 6.0 0.2 12.0 / 8.0 7.0 150
MwT-5 MESFET 30 / 110 5 2.0 / 0.0 40 / 23 3.0 / 0.0 2.0 / 4.5 0.4 8.0 / 5.0 0.4 10.0 / 7.0 6.5 150
MwT-7
Nonlinear Model
MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 / 1.0 1.5 / 4.5 0.4 8.0 / 5.0 0.4 8.0 / 6.0 6.0 180

Broad-Band, Medium Power

The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 80
MwT-2 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4

12.0 / 8.0

7.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0 2.0 / 5.0 0.2 12.0 / 6.0 0.2 12.0 / 8.0 7.0 150
MwT-6 MESFET 90 / 360 15 2.0 / 0.0 145 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 60
MwT-7
Nonlinear Model
MESFET 26 / 98 4 3.0 / 0.0 45 / 36 3.0 /1.0 1.5 / 4.5 0.4

8.0 / 5.0

0.4 8.0 / 6.0 6.0 180
MwT-8 MESFET 120 / 480 20 2.5 / 0.0 160 / 144 3.0 / 5.0 2.0 / 5.0 1.2 12.0 / 8.0 1.2

12.0 / 8.0

7.5 45
MwT-9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 0.5 12.0 / 6.0 0.5 12.0 / 6.0 7.0 70
MwT-15 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 80
MwT-16 MESFET 90 / 360 15 2.0 / 0.0 130 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 55
MwT-17
Nonlinear Model
MESFET 240 / 920 40 2.0 / 0.0 380 / 290 3.0 / 6.0 2.5 / 5.0 1.6 12.0 / 6.0 1.6 12.0 / 8.0 7.0 33
MwT-1789 MESFET 440 / 680   2.5 / 0.0 380 3.0 / 16.0 2.0 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 35
MwT-1789SB MESFET 440 / 680   2.0 / 0.0 380 3.0 / 16.0 2.5 / 5.0 2.4 12.0 / 6.0 2.4 12.0 / 9.0 8.0 30

Narrow-Band Power Applications

Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-2 MESFET 60 / 240 10 4.0 / 0.0 100 / 75 3.0 / 4.0 2.0 / 5.0 0.4 12.0 / 6.0 0.4 12.0 / 8.0 7.0 80
MwT-3 MESFET 30 / 120 5 4.0 / 0.0 55 / 35 3.0 / 2.0

2.0 / 5.0

0.2 12.0 / 6.0 0.2 12.0 / 8.0 7.0 150
MwT-6 MESFET 90 / 360 15 2.0 / 0.0 145 / 108 3.0 / 6.0 2.0 / 5.0 0.6 12.0 / 6.0 0.6 12.0 / 8.0 7.0 60
MwT-8 MESFET 120 / 480 20 2.5 / 0.0 160 / 144 3.0 / 5.0 2.0 / 5.0 1.2 12.0 / 8.0 1.2 12.0 / 8.0 7.5 45
MwT-9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 0.5 12.0 / 6.0 0.5 12.0 / 6.0 7.0 70
MwT-17
Nonlinear Model
MESFET 240 / 920 40 2.0 / 0.0 380 / 290 3.0 / 6.0 2.0 / 5.0 1.6 12.0 / 6.0 1.6 12.0 / 8.0 7.0 33

Narrow-Band, Low Noise Applications

Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Device Type Idss Range Min/Max mA Idss Range in Each container mA

Gm Tested at Vds / Vgs V/V

Gm Typ / Min mS Vp Tested at Vds / Ids V/ mA Vp Typ / Max (-V) Bvgso Tested at Igs (-mA) Bvgso Typ / Min (-V) Bvgdo Tested at Igd (-mA) Bvgdo Typ / Min V/V Vds Absolute Max V Chip Rth Typ 0C/W
MwT-1 MESFET 60 / 240 10 4.0 / 0.0 120 / 90 3.0 / 4.0 2.0 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 6.0 90
MwT-4 MESFET 18 / 66 3 3.0 / 0.0 35 / 27 3.0 / 1.0 1.5 / 4.0 0.2 8.0 / 5.0 0.2 8.0 / 6.0 6.0 250
MwT-A9 MESFET 78 / 282 12 2.0 / 0.0 120 / 95 3.0 / 5.0 2.0 / 5.0 1.0 10. 0 / 5.0 1.0 10. 0 / 6.0 6.0 70
MwT-A989 MESFET 100 / 200   2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75
MwT-A989SB MESFET 100 / 200   2.0 / 0.0 90 / 120 3.0 / 5.0 2.5 / 5.0 1.0 10.0 / 5.0 1.0 10.0 / 6.0 8.0 75