GaAs FET and pHEMT Devices

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Ultra Linear, High Dynamic Range, Low Phase Noise
GaAs Process is Approved for Space Applications with Proven Reliability
Commercial, Industrial, Military, and Space Grade
100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
100% Die Probe Test with Data Recorded for Shipment
100% Visual Performed (Level 1, 3, or 4) before Shipment
100% Idss Match to Provide Performance Consistency
RF Sample Test Capability Available Upon Request
Standard and Custom Device Specifications
High-Rel and Space-Rel Screening Options Available
RoHS (lead-free) Compliant Product Available

Broad-Band, High Gain

Model	P-1dB @12GHz Typ dBm	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Gate Width / Length um	Package	Ideal Circuit	Nominal Chip Size um - um	_uabb_version	Ga @ N.F @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB
MwT-1	24.0/23.0	10.0 / 9.0	5, no	1, 1, 2	single stripe	630/0.3	70, 73 / 71	FB Amp	775 ? 241
MwT-1F										1.28.9
MwT-3	21.0/20.0	11.0 / 10.0	5, no	1, 1, 2	single stripe	300/0.3	70, 73 / 71	BA Amp	406 ? 241
MwT-3F										1.28.9
MwT-5	19.0/15.0	13.0 / 12.0	5, no	3, 1, 2	dual gate	2?300/0.3	NA / NA	Buffer Amp	406 ? 241
MwT-5F										1.28.9
MwT-7	20.0/18.0	10.5 / 10.0	5, no	2, 2, 2		250/0.3		BA/SE Amp	356 ? 241		8.0 / -	2.0 / -
MwT-7F										1.28.9

Broad-Band, Low Noise Figure

Model	P-1dB @12GHz Typ dBm	Ga @ N.F @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Gate Width / Length um	Package	Ideal Circuit	Nominal Chip Size um - um	_uabb_version	IP3 @12GHz Typ dBm
MwT-4	14.0/13.0	9.0 / 8.0	1.5 / 1.8	9.0 / 8.0	5, no	1, 1, 2	single stripe	180/0.3	70, 73 / NA	Osc & Amp	356 ? 241
MwT-7	20.0/18.0	8.0 / -	2.0 / -	10.5 / 10.0	5, no	2, 2, 2		250/0.3		BA/SE Amp	356 ? 241
MwT-7F												1.28.9
MwT-9/A9	25.5/23.0	6.5 / 6.0	1.8 / -	9.5 / 8.5	5, no	1, 1, 2	single stripe	750/0.3	84, 70, 73 / 71	FB Amp	419 ? 292
MwT-A989	25.0/23.0		0.9 (1)	17.0/15.0 (1)	4, no	1, 1, 2	Interdigit	750/0.5	sot89	Power Amp	419- 292		40
MwT-A989SB	25.0/23.0		0.9ÿ(1)	17.0/15.0ÿ(1)	4, no	1, 1, 2	Interdigit	750/0.5	sot89	Power Amp	419 ? 292		40
MwT-LP7	20.0/18.0	8.0 / -	2.0 / -	10.5 / 10.0	5, no	2, 2, 2	single stripe	250/0.3	70, 73 / NA	Oscillator	356 ? 241

Broad-Band, Medium Power

Model	P-1dB @12GHz Typ dBm	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Gate Width / Length um	Package	Ideal Circuit	Nominal Chip Size um - um	Package Available Sealed / Hermetic	IP3 @12GHz Typ dBm	Ga @ N.F @12GHz Typ/Min dB	_uabb_version	N.F. @12Ghz Typ/Max dB
MwT-1	24.0/23.0	10.0 / 9.0	5, no	1, 1, 2	single stripe	630/0.3	70, 73 / 71	FB Amp	775 ? 241
MwT-15	25.0/23.0	9.5 / 8.5	5, no	4, 2, 5	single stripe	630/0.3		Amplifier	775 ? 241
MwT-16	27.0/26.0	8.5 / 7.5	5, no	6, 2, 7	single stripe	900/0.3		BA Amp	1067 ? 241
MwT-17	29.5/28.5	7.0 / 6.0	5, no	4, 4, 5	Interdigit	2400/0.8		BA/FB Amp	1130 • 279	89 / 71	45/-
MwT-1789	28		4, no	4, 4, 5	Interdigitÿ	2400/0.8	sot89	Low Noise	1130 - 279		46	16.0ÿ(1)
MwT-1789SB	28		4, no	4, 4, 5	Interdigitÿ	2400/0.8	sot89	Power Amp	1130 - 279		44	18.0ÿ(1)
MwT-1F													1.28.9
MwT-2	24.5/23.0	8.5 / 8.0	5, no	2, 2, 3		630/0.3		BA Amp	775 ? 241
MwT-3	21.0/20.0	11.0 / 10.0	5, no	1, 1, 2	single stripe	300/0.3	70, 73 / 71	BA Amp	406 ? 241
MwT-3F													1.28.9
MwT-6	27.0/26.0	8.0 / 7.5	5, no	2, 2, 3	Interdigit	900/0.3	- / 71	FB/DA Amp	559 ? 292
MwT-7	20.0/18.0	10.5 / 10.0	5, no	2, 2, 2		250/0.3		BA/SE Amp	356 ? 241			8.0 / -		2.0 / -
MwT-7F													1.28.9
MwT-8	28.0/27.0	7.5 / 7.0	4, no	2, 2, 3		2400/0.3		Power Amp	673 ? 305

High-Power, High-Linearity Applications

Model	P-1dB @12GHz Typ dBm	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Gate Width / Length um	Package	Ideal Circuit	Nominal Chip Size um - um	_uabb_version	IP3 @12GHz Typ dBm	N.F. @12Ghz Typ/Max dB
MwT- 11	30.0/28.0	9.0 / 7.0	4, no	2, 2, 3	Interdigit	2400/0.3	71	Power Amp	775 ? 343
MwT-11F										1.28.9
MwT-17Q3	28.0/27.0	18.0/16.0ÿ(1)	4, no	4, 4, 5	Interdigit	2400/0.8	QFN	Power Amp	1130 - 279		46	1.5ÿ(1)

Low Noise pHEMT Devices:

Model	P-1dB @12GHz Typ dBm	Ga @ N.F @4GHz Typ/Min dB	Ga @ N.F @12GHz Typ/Min dB	N.F. @4GHz Typ dB	N.F. @12Ghz Typ/Max dB	Gate Width / Length um
MwT-LN240	16	13	10 / --	0.2	0.5	240/.15
MwT-LN300	16	13	10 / --	0.2	0.6	300/.15
MwT-LN600	20	12	8-Sep	0.2	0.5	600/.15

Narrow-Band Power Applications

Model	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Max dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit	Package	_uabb_version
MwT-17	89 / 71	2400/0.8	Interdigit	4, 4, 5	5, no	7.0 / 6.0	29.5/28.5	45/-	1130 • 279	BA/FB Amp
MwT-2		630/0.3		2, 2, 3	5, no	8.5 / 8.0	24.5/23.0		775 ? 241	BA Amp
MwT-3		300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	21.0/20.0		406 ? 241	BA Amp	70, 73 / 71
MwT-3F												1.28.9
MwT-6		900/0.3	Interdigit	2, 2, 3	5, no	8.0 / 7.5	27.0/26.0		559 ? 292	FB/DA Amp	- / 71
MwT-8		2400/0.3		2, 2, 3	4, no	7.5 / 7.0	28.0/27.0		673 ? 305	Power Amp

Narrow-Band, Low Noise Applications

Model	P-1dB @12GHz Typ dBm	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Gate Width / Length um	Package	Ideal Circuit	Nominal Chip Size um - um	_uabb_version	Ga @ N.F @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	IP3 @12GHz Typ dBm
MwT-1	24.0/23.0	10.0 / 9.0	5, no	1, 1, 2	single stripe	630/0.3	70, 73 / 71	FB Amp	775 ? 241
MwT-1F										1.28.9
MwT-4	14.0/13.0	9.0 / 8.0	5, no	1, 1, 2	single stripe	180/0.3	70, 73 / NA	Osc & Amp	356 ? 241		9.0 / 8.0	1.5 / 1.8
MwT-9/A9	25.5/23.0	9.5 / 8.5	5, no	1, 1, 2	single stripe	750/0.3	84, 70, 73 / 71	FB Amp	419 ? 292		6.5 / 6.0	1.8 / -
MwT-A989	25.0/23.0	17.0/15.0 (1)	4, no	1, 1, 2	Interdigit	750/0.5	sot89	Power Amp	419- 292			0.9 (1)	40
MwT-A989SB	25.0/23.0	17.0/15.0ÿ(1)	4, no	1, 1, 2	Interdigit	750/0.5	sot89	Power Amp	419 ? 292			0.9ÿ(1)	40

New Foundry

Model	_uabb_version
MwT-11F	1.28.9
MwT-1F	1.28.9
MwT-3F	1.28.9
MwT-5F	1.28.9
MwT-7F	1.28.9
MwT-PH11F	1.28.9
MwT-PH15F	1.28.9
MwT-PH27F	1.28.9
MwT-PH28F	1.28.9
MwT-PH29F	1.28.9
MwT-PH30F	1.28.9
MwT-PH31F	1.28.9
MwT-PH32F	1.28.9
MwT-PH33F	1.28.9
MwT-PH3F	1.28.9
MwT-PH4F	1.28.9
MwT-PH5F	1.28.9
MwT-PH7F	1.28.9
MwT-PH8F	1.28.9
MwT-PH9F	1.28.9
MwT-PH9F	1.28.9

pHEMT MM-Wave Applications and Power pHEMT Devices

Model	IP3 @12GHz Typ dBm	P-1dB @12GHz Typ dBm	S.S. Gain @12GHz Typ/Max dB	Chip Thick-ness & VIA Hole mil, y/n	Gate Drain Source Bond Pads Qty	Gate Layout Method	Package	Ideal Circuit	Nominal Chip Size um - um	_uabb_version	Ga @ N.F @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB
MwT-PH11	42	32.0/30.0	9.0 / 7.0	4, no	2, 2, 3	Interdigit	71	Power Amp	775 ? 343
MwT-PH11F										1.28.9
MwT-PH15		28.5/27.0	12.0 / 10.0	4, no	3, 2, 5	single stripe	70, 73 / 71	Medium pow	775 ? 241
MwT-PH15F										1.28.9
MwT-PH16		30.0/28.5	11.5 / 10.0	4, no	6, 2, 7	single stripe	71	Medium pow	1067 ? 241
MwT-PH16A		31.0 / 29.0	11.0 / 9.5	4, no	4, 4, 5	Interdigit		Medium pow	1126 ? 330
MwT-PH27F										1.28.9
MwT-PH28F										1.28.9
MwT-PH29F										1.28.9
MwT-PH30F										1.28.9
MwT-PH31F										1.28.9
MwT-PH32F										1.28.9
MwT-PH33F										1.28.9
MwT-PH3F										1.28.9
MwT-PH4		20.0/18.0	11.0 / 10.0	5, no	1, 1, 2	single stripe	70, 73 / 71	Osc & Amp	356 ? 241		13.0/12.0	1.2
MwT-PH4F										1.28.9
MwT-PH5		20.0/18.0	18.0 / 15.0	4, no	1, 1, 2	single stripe		Power Amp	406 ? 241		12.0/ -	2.0 / -
MwT-PH5F										1.28.9
MwT-PH7		24.0/22.0	13.5 / 12.0	4, no	2, 1, 2	single stripe	70, 73 / 71	Medium pow	356 ? 241
MwT-PH7F										1.28.9
MwT-PH8		30.0/29.0	10.0 / 9.0	4, no	2, 2, 3	Interdigit	71	Medium pow	673 ? 305
MwT-PH8F										1.28.9
MwT-PH9		27.0/26.0	10.0 / 9.0	4, no	1, 1, 2	Interdigit	70, 73 / 71	Power Amp	419 ? 292
MwT-PH9F										1.28.9
MwT-PH9F										1.28.9

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