GaAs FET and pHEMT Devices

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)

  • Ultra Linear, High Dynamic Range, Low Phase Noise
  • GaAs Process is Approved for Space Applications with Proven Reliability
  • Commercial, Industrial, Military, and Space Grade
  • 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
  • 100% Die Probe Test with Data Recorded for Shipment
  • 100% Visual Performed (Level 1, 3, or 4) before Shipment
  • 100% Idss Match to Provide Performance Consistency
  • RF Sample Test Capability Available Upon Request
  • Standard and Custom Device Specifications
  • High-Rel and Space-Rel Screening Options Available
  • RoHS (lead-free) Compliant Product Available
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Low Noise pHEMT Devices:

Model
S-Parameter
Gate Width / Length um N.F. @12Ghz Typ dB N.F. @4GHz Typ dB Ga @ N.F @12GHz Typ/Min dB Ga @ N.F @4GHz Typ/Min dB P-1dB @12GHz Typ dBm
MwT-LN240 240/.15 0.5 0.2 10 / -- 13 16
MwT-LN300 300/.15 0.6 0.2 10 / -- 13 16
MwT-LN600 600/.15 0.5 0.2 9 / 8 12 20

pHEMT MM-Wave Applications and Power pHEMT Devices

The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-PH4 70, 73 / 71 180/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 1.2 13.0/12.0 20.0/18.0 356 • 241 Osc & Amp
MwT-PH5 300/0.3 single stripe 1, 1, 2 4, no 18.0 / 15.0 2.0 / - 12.0/ - 20.0/18.0 406 • 241 Power Amp
MwT-PH7 70, 73 / 71 250/0.3 single stripe 2, 1, 2 4, no 13.5 / 12.0 24.0/22.0 356 • 241 Medium pow
MwT-PH8 71 1200/0.3 Interdigit 2, 2, 3 4, no 10.0 / 9.0 30.0/29.0 673 • 305 Medium pow
MwT-PH9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 4, no 10.0 / 9.0 27.0/26.0 419 • 292 Power Amp
MwT-PH11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 32.0/30.0 42 775 • 343 Power Amp
MwT-PH15 70, 73 / 71 630/0.3 single stripe 3, 2, 5 4, no 12.0 / 10.0 28.5/27.0 775 • 241 Medium pow
MwT-PH16 71 900/0.3 single stripe 6, 2, 7 4, no 11.5 / 10.0 30.0/28.5 1067 • 241 Medium pow
MwT-PH16A 1600/0.25 Interdigit 4, 4, 5 4, no 11.0 / 9.5 31.0 / 29.0 1126 • 330 Medium pow

High-Power, High-Linearity Applications

Ideal for commercial, military, hi-rel space applications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F> @12GHz Typ/Min dBm P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT- 11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 30.0/28.0 775 • 343 Power Amp
MwT-17Q3 QFN 2400/0.8 Interdigit 4, 4, 5 4, no 18.0/16.0(1) 1.5(1) 28.0/27.0 46 1130 • 279 Power Amp

Broad-Band, Low Noise Figure

Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 356 • 241 Osc & Amp
MwT-7
Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 BA/SE Amp
MwT-LP7 70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 Oscillator
MwT-A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 419 • 292 FB Amp
MwT-A989 sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0(1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp
MwT-A989SB sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0(1) 0.9(1) 25.0/23.0 40 419 • 292 Power Amp

Broad-Band, High Gain

Recommended for multi-octave applications where maximum gain is the driving parameter.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @ 12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0 / 23.0 775 • 241 FB Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0 / 20.0 406 • 241 BA Amp
MwT-5 NA / NA 2•300/0.3 dual gate 3, 1, 2 5, no 13.0 / 12.0 3.5 / - 11.0 / - 19.0 / 15.0 406 • 241 Buffer Amp
MwT-7
Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0 / 18.0 356 • 241 BA/SE Amp

Broad-Band, Medium Power

The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0/23.0 775 • 241 FB Amp
MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0 775 • 241 BA Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0/20.0 406 • 241 BA Amp
MwT-6 - / 71 900/0.3 Interdigit 2, 2, 3 5, no 8.0 / 7.5 - / - - / - 27.0/26.0 559 • 292 FB/DA Amp
MwT-7
Nonlinear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 BA/SE Amp
MwT-8 71 2400/0.3 Interdigit 2, 2, 3 4, no 7.5 / 7.0 28.0/27.0 673 • 305 Power Amp
MwT-9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 5, no 9.0 / 8.0 - / - - / - 26.0/25.0 419 • 292 FB Amp
MwT-15 - / - 630/0.3 single stripe 4, 2, 5 5, no 9.5 / 8.5 - / - - / - 25.0/23.0 775 • 241 Amplifier
MwT-16 - / - 900/0.3 single stripe 6, 2, 7 5, no 8.5 / 7.5 - / - - / - 27.0/26.0 1067 • 241 BA Amp
MwT-17
Nonlinear Model
89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2) 29.5/28.5 45/- 1130 • 279 BA/FB Amp
MwT-1789 sot89 2400/0.8 Interdigit 4, 4, 5 4, no (4) 16.0(1) 28 46 1130 • 279 Low Noise
MwT-1789SB sot89 2400/0.8 Interdigit 4, 4, 5 4, no (3) 18.0(1) 28 44 1130 • 279 Power Amp

Narrow-Band Power Applications

Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12GHz Typ/Max dB Ga @  N.F @12GHz Typ/Min dB P-1dB @12GHz Typ dBm IP3 @12GHz Typ dBm Nominal Chip Size um - um Ideal Circuit
MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0   775 • 241 BA Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0/20.0   406 • 241 BA Amp
MwT-6 - / 71 900/0.3 Interdigit 2, 2, 3 5, no 8.0 / 7.5 - / - - / - 27.0/26.0   559 • 292 FB / DA Amp
MwT-8 71 2400/0.3 Interdigit 2, 2, 3 4, no 7.5 / 7.0     28.0/27.0   673 • 305 Power Amp
MwT-9 70, 73 / 71 750/0.3 Interdigit 1, 1, 2 5, no 9.0 / 8.0 - / - - / - 26.0/25.0   419 • 292 FB Amp
MwT-17
Nonlinear Model
89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2)   29.5/28.5 45 / - 1130 • 279 BA / FB Amp

Narrow-Band, Low Noise Applications

Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Package Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Max dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ dBm IP3 @12GHz Typ dBm Nominal Chip Size um - um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0/23.0 775 • 241 FB Amp
MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 356 • 241 Osc & Amp
MwT-A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 419 • 292 FB Amp
MwT-A989 sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp
MwT-A989SB sot89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0ÿ(1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp

SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz