GaAs FET and pHEMT Devices
GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)
- Ultra Linear, High Dynamic Range, Low Phase Noise
- GaAs Process is Approved for Space Applications with Proven Reliability
- Commercial, Industrial, Military, and Space Grade
- 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
- 100% Visual Performed (Level 1, 3, or 4) before Shipment
- 100% Idss Match to Provide Performance Consistency
- RF Sample Test Capability Available Upon Request
- Standard and Custom Device Specifications
- High-Rel and Space-Rel Screening Options Available
- RoHS (lead-free) Compliant Product Available
- GaAs FET Application Notes and Drawings. CLICK HERE
MwT Announcement
MwT utilizes outside foundry to continuously improve our device performance, consistency and quality with competitive cost. CLICK HERE for more information and a list of the affected devices.

NEW GaAs and pHEMT Devices - Replaces EOL Products LISTED HERE
Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @12GHz Typ dB |
PAE @12GHz % |
OIP3 @12GHz Typ dBm |
Psat @12GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
|||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH9F | MwT-PH9 | 70, 71, 73 | 13.0 | 45 | 34 | 28.0 | 750/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 485•315 | |||
MwT-PH15F | MwT-PH15 | 71 | 12.0 | 45 | 34 | 28.5 | 630/0.25 | single stripe | 4,2,5 | 4.0/100 | no | 785•260 | |||
MwT-PH29F | RFMD FDP750 BeRex BCP080C |
70, 71, 73 | 13.0 | 48 | 35 | 28.5 | 800/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 450•375 | |||
MwT-PH30F | N/A | 70, 71, 73 | 14.0 | 45 | 34 | 28.0 | 800/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @18GHz Typ dB |
PAE @18GHz % |
OIP3 @18GHz Typ dBm |
Psat @18GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH3F | N/A | 70, 71, 73 | 14.0 | 50 | 32 | 24.0 | 300/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 425•260 |
MwT-PH4F | MwT-PH4 | 70, 71, 73 | 14.0 | 45 | 32 | 23.0 | 180/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 385•260 |
MwT-PH7F | MwT-PH7 | 70, 71, 73 | 15.0 | 45 | 30 | 24.5 | 250/0.25 | single stripe | 2,2,2 | 4.0/100 | no | 365•260 |
MwT-PH27F | N/A | 70, 71, 73 | 16.0 | 45 | 31 | 25.0 | 400/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 340•360 |
MwT-PH28F | N/A | 70, 71, 73 | 13.0 | 45 | 32 | 26.5 | 600/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 340•360 |
MwT-PH33F | N/A | 70, 71, 73 | 14.0 | 45 | 29 | 24.0 | 300/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 415•315 |
Narrow and Broad Band High Efficiency Amplifier and High Power Amplifier Applications
- Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @12GHz Typ dB |
PAE @12GHz % |
OIP3 @12GHz Typ dBm |
Psat @12GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH8F | MwT-PH8 | 71 | 11.0 | 42 | 37 | 30.0 | 1200/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 670•315 |
MwT-PH11F | MwT-PH11 | 71 | 12.0 | 45 | 40 | 33.0 | 2400/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 780•345 |
MwT-PH11FV | MwT-PH11 | 71 | 12.0 | 45 | 40 | 33.0 | 2400/0.25 | Interdigit | 2,2,3 | 4.0/100 | yes | 780•345 |
MwT-PH31F | N/A | 71 | 13.0 | 44 | 35 | 30.0 | 1200/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
MwT-PH32F | N/A | 71 | 13.0 | 43 | 37 | 30.5 | 1600/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
Narrow and Broad Band Linear Amplifier and Oscillator Applications
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available | S.S. Gain @12GHz Typ dB | N.F. @12Ghz Typ dB | Ga @ N.F @12GHz Typ dB | P-1dB @12GHz Typ dBm | PAE @12GHz Typ dBm | OIP3 @12GHz Typ dBm | Psat @12GHz Typ dBm | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness (mil/um) | VIA Hole, y/n | Chip Size um•um |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1F
Modelithic Model |
MwT-1 | 70,71,73 | 10.0 | 2.0 | 7.0 | 26.0 | 35 | 37 | 27.0 | 630/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 775•260 |
MwT-3F
Modelithic Model |
MwT-3 | 70,71,73 | 12.0 | -- | -- | 22.0 | 35 | 32 | 23.0 | 300/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 415•260 |
MwT-5F | MwT-5 | 71 | 19.0 | 3.5 | 11.0 | 21.0 | 35 | -- | 22.0 | 300•2/0.25 | dual gate | 3,1,2 | 4.0/100 | no | 415•260 |
MwT-7F
Modelithic Model |
MwT-7 MwT-S7 MwT-LP7 | 70,71,73 | 15.0 | 2.0 | 8.0 | 21.0 | 35 | 32 | 22.0 | 250/0.25 | single stripe | 2,2,2 | 4.0/100 | no | 365•250 |
MwT-9F
Modelithic Model |
MwT-9 MwT-A9 | 70,71,73 | 11.0 | -- | -- | 26.5 | 35 | 35 | 27.0 | 750/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 485•315 |
High-Power Amplifier and Oscillator Applications
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available | S.S. Gain @8GHz Typ dB | N.F. @8Ghz Typ dB | Ga @ N.F @8GHz Typ dB | P-1dB @8GHz Typ dBm | PAE @8GHz Typ dBm | OIP3 @8GHz Typ dBm | Psat @8GHz Typ dBm | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness (mil/um) | VIA Hole, y/n | Chip Size um•um |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-11F
Modelithic Model |
MwT-11 MwT-17 | 71 | 9.0 | -- | -- | 32.0 | 40 | 42(1) | 32.5 | 2400/0.25 | Interdigit | 2, 2, 3 | 4.0/100 | no | 780•345 |
Model Number |
Package Available Sealed /Hermetic |
Gate Width/Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Max dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit | |||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1789 | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | -- | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp | |||
MwT-1789SB | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | -- | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp |
(1) Tested at Po=25dBm/tone
The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.
Model Number S-Parameter |
Packages Available | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH4 | 70, 71, 73 | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | 1.2 | 13.0/12.0 | 20.0/18.0 | 356 • 241 | Osc & Amp | |
MwT-PH5 | 300/0.3 | single stripe | 1, 1, 2 | 4, no | 18.0 / 15.0 | 2.0 / - | 12.0/ - | 20.0/18.0 | 406 • 241 | Power Amp | ||
MwT-PH8 | 71 | 1200/0.3 | Interdigit | 2, 2, 3 | 4, no | 10.0 / 9.0 | 30.0/29.0 | 673 • 305 | Medium pow | |||
MwT-PH9 | 70, 71, 73 | 750/0.3 | Interdigit | 1, 1, 2 | 4, no | 10.0 / 9.0 | 27.0/26.0 | 419 • 292 | Power Amp | |||
MwT-PH11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 32.0/30.0 | 42 | 775 • 343 | Power Amp | ||
MwT-PH16 | 71 | 900/0.3 | single stripe | 6, 2, 7 | 4, no | 11.5 / 10.0 | 30.0/28.5 | 1067 • 241 | Medium pow | |||
MwT-PH16A | 1600/0.25 | Interdigit | 4, 4, 5 | 4, no | 11.0 / 9.5 | 31.0 / 29.0 | 1126 • 330 | Medium pow |
High-Power, High-Linearity Applications
Ideal for commercial, military, hi-rel space applications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F> @12GHz Typ/Min dBm | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 30.0/28.0 | 775 • 343 | Power Amp | |||
MwT-17Q3 | QFN | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | 18.0/16.0(1) | 1.5(1) | 28.0/27.0 | 46 | 1130 • 279 | Power Amp |
Broad-Band, Low Noise Figure
Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
MwT-LP7 | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | Oscillator | |
MwT-9/A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
MwT-A989 | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
MwT-A989SB | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9(1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
Broad-Band, High Gain
Recommended for multi-octave applications where maximum gain is the driving parameter.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @ 12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-5 | NA / NA | 2•300/0.3 | dual gate | 3, 1, 2 | 5, no | 13.0 / 12.0 | 3.5 / - | 11.0 / - | 19.0 / 15.0 | 406 • 241 | Buffer Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp |
Broad-Band, Medium Power
The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
MwT-17 | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45/- | 1130 • 279 | BA/FB Amp | |
MwT-1789 | SOT89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (4) | 16.0(1) | 28 | 46 | 1130 • 279 | Low Noise | |
MwT-1789SB | SOT89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp |
Narrow-Band Power Applications
Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12GHz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-8 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 7.5 / 7.0 | 28.0/27.0 | 673 • 305 | Power Amp | |||
MwT-17 | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45 / - | 1130 • 279 | BA / FB Amp |
Narrow-Band, Low Noise Applications
Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
Model S-Parameter |
Package | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Max dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
MwT-9/A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
MwT-A989 | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0 (1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
MwT-A989SB | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0ÿ(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz
Low Noise pHEMT Devices:
Model S-Parameter |
Gate Width / Length um | N.F. @12Ghz Typ dB | N.F. @4GHz Typ dB | Ga @ N.F @12GHz Typ/Min dB | Ga @ N.F @4GHz Typ/Min dB | P-1dB @12GHz Typ dBm |
---|---|---|---|---|---|---|
MwT-LN180 | 180/015 | 0.5 | 0.2 | 10 / -- | 14.5 | 16 |
MwT-LN240 | 240/.15 | 0.5 | 0.2 | 10 / -- | 13 | 16 |
MwT-LN300 | 300/.15 | 0.6 | 0.2 | 10 / -- | 13 | 16 |
MwT-LN600 | 600/.15 | 0.5 | 0.2 | 9 / 8 | 12 | 20 |