GaAs FET and pHEMT Devices

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)

Ultra Linear, High Dynamic Range, Low Phase Noise
GaAs Process is Approved for Space Applications with Proven Reliability
Commercial, Industrial, Military, and Space Grade
100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
100% Visual Performed (Level 1, 3, or 4) before Shipment
100% Idss Match to Provide Performance Consistency
RF Sample Test Capability Available Upon Request
Standard and Custom Device Specifications
High-Rel and Space-Rel Screening Options Available
RoHS (lead-free) Compliant Product Available
GaAs FET Application Notes and Drawings. CLICK HERE

MwT Announcement

MwT utilizes outside foundry to continuously improve our device performance, consistency and quality with competitive cost. CLICK HERE for more information and a list of the affected devices.

NEW GaAs and pHEMT Devices - Replaces EOL Products LISTED HERE

Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications

Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	PAE @12GHz %	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH9F	MwT-PH9	70, 71, 73	13.0	45	34	28.0	750/0.25	Interdigit	1,1,2	4.0/100	no	485•315
MwT-PH15F	MwT-PH15	71	12.0	45	34	28.5	630/0.25	single stripe	4,2,5	4.0/100	no	785•260
MwT-PH29F	RFMD FDP750 BeRex BCP080C	70, 71, 73	13.0	48	35	28.5	800/0.25	Interdigit	1,1,2	4.0/100	no	450•375
MwT-PH30F	N/A	70, 71, 73	14.0	45	34	28.0	800/0.25	Interdigit	2,2,3	4.0/100	no	530•375

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @18GHz Typ dB	PAE @18GHz %	OIP3 @18GHz Typ dBm	Psat @18GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH3F	N/A	70, 71, 73	14.0	50	32	24.0	300/0.25	single stripe	1,1,2	4.0/100	no	425•260
MwT-PH4F	MwT-PH4	70, 71, 73	14.0	45	32	23.0	180/0.25	single stripe	1,1,2	4.0/100	no	385•260
MwT-PH7F	MwT-PH7	70, 71, 73	15.0	45	30	24.5	250/0.25	single stripe	2,2,2	4.0/100	no	365•260
MwT-PH27F	N/A	70, 71, 73	16.0	45	31	25.0	400/0.25	Interdigit	1,1,2	4.0/100	no	340•360
MwT-PH28F	N/A	70, 71, 73	13.0	45	32	26.5	600/0.25	Interdigit	1,1,2	4.0/100	no	340•360
MwT-PH33F	N/A	70, 71, 73	14.0	45	29	24.0	300/0.25	Interdigit	1,1,2	4.0/100	no	415•315

Narrow and Broad Band High Efficiency Amplifier and High Power Amplifier Applications

Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	PAE @12GHz %	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH8F	MwT-PH8	71	11.0	42	37	30.0	1200/0.25	Interdigit	2,2,3	4.0/100	no	670•315
MwT-PH11F	MwT-PH11	71	12.0	45	40	33.0	2400/0.25	Interdigit	2,2,3	4.0/100	no	780•345
MwT-PH11FV	MwT-PH11	71	12.0	45	40	33.0	2400/0.25	Interdigit	2,2,3	4.0/100	yes	780•345
MwT-PH31F	N/A	71	13.0	44	35	30.0	1200/0.25	Interdigit	2,2,3	4.0/100	no	530•375
MwT-PH32F	N/A	71	13.0	43	37	30.5	1600/0.25	Interdigit	2,2,3	4.0/100	no	530•375

Narrow and Broad Band Linear Amplifier and Oscillator Applications

Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	N.F. @12Ghz Typ dB	Ga @ N.F @12GHz Typ dB	P-1dB @12GHz Typ dBm	PAE @12GHz Typ dBm	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole, y/n	Chip Size um•um
MwT-1F Modelithic Model	MwT-1	70,71,73	10.0	2.0	7.0	26.0	35	37	27.0	630/0.25	single stripe	1,1,2	4.0/100	no	775•260
MwT-3F Modelithic Model	MwT-3	70,71,73	12.0	--	--	22.0	35	32	23.0	300/0.25	single stripe	1,1,2	4.0/100	no	415•260
MwT-5F	MwT-5	71	19.0	3.5	11.0	21.0	35	--	22.0	300•2/0.25	dual gate	3,1,2	4.0/100	no	415•260
MwT-7F Modelithic Model	MwT-7 MwT-S7 MwT-LP7	70,71,73	15.0	2.0	8.0	21.0	35	32	22.0	250/0.25	single stripe	2,2,2	4.0/100	no	365•250
MwT-9F Modelithic Model	MwT-9 MwT-A9	70,71,73	11.0	--	--	26.5	35	35	27.0	750/0.25	Interdigit	1,1,2	4.0/100	no	485•315

High-Power Amplifier and Oscillator Applications

Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @8GHz Typ dB	N.F. @8Ghz Typ dB	Ga @ N.F @8GHz Typ dB	P-1dB @8GHz Typ dBm	PAE @8GHz Typ dBm	OIP3 @8GHz Typ dBm	Psat @8GHz Typ dBm	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole, y/n	Chip Size um•um
MwT-11F Modelithic Model	MwT-11 MwT-17	71	9.0	--	--	32.0	40	42(1)	32.5	2400/0.25	Interdigit	2, 2, 3	4.0/100	no	780•345

Model Number	Package Available Sealed /Hermetic	Gate Width/Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Max dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-1789	sot89	2400/0.8	Interdigit	4, 4, 5	4, no	--	(3)	18.0(1)	28	44	1130 • 279	Power Amp
MwT-1789SB	sot89	2400/0.8	Interdigit	4, 4, 5	4, no	--	(3)	18.0(1)	28	44	1130 • 279	Power Amp

(1) Tested at Po=25dBm/tone

"End of Life/Legacy GaAs and pHEMT Devices available for Last Time Buy orders. Read Foundry Announcement Here"

The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.

Model Number S-Parameter	Packages Available	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Chip Size um • um	Ideal Circuit
MwT-PH4	70, 71, 73	180/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	1.2	13.0/12.0	20.0/18.0		356 • 241	Osc & Amp
MwT-PH5		300/0.3	single stripe	1, 1, 2	4, no	18.0 / 15.0	2.0 / -	12.0/ -	20.0/18.0		406 • 241	Power Amp
MwT-PH8	71	1200/0.3	Interdigit	2, 2, 3	4, no	10.0 / 9.0			30.0/29.0		673 • 305	Medium pow
MwT-PH9	70, 71, 73	750/0.3	Interdigit	1, 1, 2	4, no	10.0 / 9.0			27.0/26.0		419 • 292	Power Amp
MwT-PH11	71	2400/0.3	Interdigit	2, 2, 3	4, no	9.0 / 7.0			32.0/30.0	42	775 • 343	Power Amp
MwT-PH16	71	900/0.3	single stripe	6, 2, 7	4, no	11.5 / 10.0			30.0/28.5		1067 • 241	Medium pow
MwT-PH16A		1600/0.25	Interdigit	4, 4, 5	4, no	11.0 / 9.5			31.0 / 29.0		1126 • 330	Medium pow

High-Power, High-Linearity Applications

Ideal for commercial, military, hi-rel space applications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F> @12GHz Typ/Min dBm	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-11	71	2400/0.3	Interdigit	2, 2, 3	4, no	9.0 / 7.0			30.0/28.0		775 • 343	Power Amp
MwT-17Q3	QFN	2400/0.8	Interdigit	4, 4, 5	4, no	18.0/16.0(1)	1.5(1)		28.0/27.0	46	1130 • 279	Power Amp

Broad-Band, Low Noise Figure

Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-4	70, 73 / NA	180/0.3	single stripe	1, 1, 2	5, no	9.0 / 8.0	1.5 / 1.8	9.0 / 8.0	14.0/13.0		356 • 241	Osc & Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	BA/SE Amp
MwT-LP7	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	Oscillator
MwT-9/A9	84, 70, 73 / 71	750/0.3	single stripe	1, 1, 2	5, no	9.5 / 8.5	1.8 / -	6.5 / 6.0	25.5/23.0		419 • 292	FB Amp
MwT-A989	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0(1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp
MwT-A989SB	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0(1)	0.9(1)		25.0/23.0	40	419 • 292	Power Amp

Broad-Band, High Gain

Recommended for multi-octave applications where maximum gain is the driving parameter.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0	775 • 241	FB Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0	406 • 241	BA Amp
MwT-5	NA / NA	2•300/0.3	dual gate	3, 1, 2	5, no	13.0 / 12.0	3.5 / -	11.0 / -	19.0 / 15.0	406 • 241	Buffer Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0	356 • 241	BA/SE Amp

Broad-Band, Medium Power

The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0		775 • 241	FB Amp
MwT-2	70, 73 / 71	630/0.3	single stripe	2, 2, 3	5, no	8.5 / 8.0	- / -	- / -	24.5/23.0		775 • 241	BA Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0		406 • 241	BA Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	BA/SE Amp
MwT-17	89 / 71	2400/0.8	Interdigit	4, 4, 5	5, no	7.0 / 6.0	(2)		29.5/28.5	45/-	1130 • 279	BA/FB Amp
MwT-1789	SOT89	2400/0.8	Interdigit	4, 4, 5	4, no		(4)	16.0(1)	28	46	1130 • 279	Low Noise
MwT-1789SB	SOT89	2400/0.8	Interdigit	4, 4, 5	4, no		(3)	18.0(1)	28	44	1130 • 279	Power Amp

Narrow-Band Power Applications

Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12GHz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-2	70, 73 / 71	630/0.3	single stripe	2, 2, 3	5, no	8.5 / 8.0	- / -	- / -	24.5/23.0		775 • 241	BA Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0		406 • 241	BA Amp
MwT-8	71	2400/0.3	Interdigit	2, 2, 3	4, no	7.5 / 7.0			28.0/27.0		673 • 305	Power Amp
MwT-17	89 / 71	2400/0.8	Interdigit	4, 4, 5	5, no	7.0 / 6.0	(2)		29.5/28.5	45 / -	1130 • 279	BA / FB Amp

Narrow-Band, Low Noise Applications

Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model S-Parameter	Package	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Max dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0		775 • 241	FB Amp
MwT-4	70, 73 / NA	180/0.3	single stripe	1, 1, 2	5, no	9.0 / 8.0	1.5 / 1.8	9.0 / 8.0	14.0/13.0		356 • 241	Osc & Amp
MwT-9/A9	84, 70, 73 / 71	750/0.3	single stripe	1, 1, 2	5, no	9.5 / 8.5	1.8 / -	6.5 / 6.0	25.5/23.0		419 • 292	FB Amp
MwT-A989	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0 (1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp
MwT-A989SB	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0ÿ(1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp

SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz

Low Noise pHEMT Devices:

Model S-Parameter	Gate Width / Length um	N.F. @12Ghz Typ dB	N.F. @4GHz Typ dB	Ga @ N.F @12GHz Typ/Min dB	Ga @ N.F @4GHz Typ/Min dB	P-1dB @12GHz Typ dBm
MwT-LN180	180/015	0.5	0.2	10 / --	14.5	16
MwT-LN240	240/.15	0.5	0.2	10 / --	13	16
MwT-LN300	300/.15	0.6	0.2	10 / --	13	16
MwT-LN600	600/.15	0.5	0.2	9 / 8	12	20

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GaAs FET Application
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