GaAs FET and pHEMT Devices

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)

Ultra Linear, High Dynamic Range, Low Phase Noise
GaAs Process is Approved for Space Applications with Proven Reliability
Commercial, Industrial, Military, and Space Grade
100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
100% Visual Performed (Level 1, 3, or 4) before Shipment
100% Idss Match to Provide Performance Consistency
RF Sample Test Capability Available Upon Request
Standard and Custom Device Specifications
High-Rel and Space-Rel Screening Options Available
RoHS (lead-free) Compliant Product Available
GaAs FET Application Notes and Drawings. CLICK HERE

NEW GaAs and pHEMT Devices - Replaces EOL Products LISTED HERE

Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications

Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	PAE @12GHz %	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH9F	MwT-PH9	70, 71, 73	13.0	45	34	28.0	750/0.25	Interdigit	1,1,2	4.0/100	no	485•315
MwT-PH15F	MwT-PH15	71	12.0	45	34	28.5	630/0.25	single stripe	4,2,5	4.0/100	no	785•260
MwT-PH29F	RFMD FDP750 BeRex BCP080C	70, 71, 73	13.0	48	35	28.5	800/0.25	Interdigit	1,1,2	4.0/100	no	450•375
MwT-PH30F	N/A	70, 71, 73	14.0	45	34	28.0	800/0.25	Interdigit	2,2,3	4.0/100	no	530•375

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @18GHz Typ dB	PAE @18GHz %	OIP3 @18GHz Typ dBm	Psat @18GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH3F	N/A	70, 71, 73	14.0	50	32	24.0	300/0.25	single stripe	1,1,2	4.0/100	no	425•260
MwT-PH4F	MwT-PH4	70, 71, 73	14.0	45	32	23.0	180/0.25	single stripe	1,1,2	4.0/100	no	385•260
MwT-PH7F	MwT-PH7	70, 71, 73	15.0	45	30	24.5	250/0.25	single stripe	2,2,2	4.0/100	no	365•260
MwT-PH27F	N/A	70, 71, 73	16.0	45	31	25.0	400/0.25	Interdigit	1,1,2	4.0/100	no	340•360
MwT-PH28F	N/A	70, 71, 73	13.0	45	32	26.5	600/0.25	Interdigit	1,1,2	4.0/100	no	340•360
MwT-PH33F	N/A	70, 71, 73	14.0	45	29	24.0	300/0.25	Interdigit	1,1,2	4.0/100	no	415•315

Narrow and Broad Band High Efficiency Amplifier and High Power Amplifier Applications

Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	PAE @12GHz %	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width/Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole y/n	Chip Size um • um
MwT-PH8F	MwT-PH8	71	11.0	42	37	30.0	1200/0.25	Interdigit	2,2,3	4.0/100	no	670•315
MwT-PH11F	MwT-PH11	71	12.0	45	40	33.0	2400/0.25	Interdigit	2,2,3	4.0/100	no	780•345
MwT-PH11FV	MwT-PH11	71	12.0	45	40	33.0	2400/0.25	Interdigit	2,2,3	4.0/100	yes	780•345
MwT-PH31F	N/A	71	13.0	44	35	30.0	1200/0.25	Interdigit	2,2,3	4.0/100	no	530•375
MwT-PH32F	N/A	71	13.0	43	37	30.5	1600/0.25	Interdigit	2,2,3	4.0/100	no	530•375

Narrow and Broad Band Linear Amplifier and Oscillator Applications

Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @12GHz Typ dB	N.F. @12Ghz Typ dB	Ga @ N.F @12GHz Typ dB	P-1dB @12GHz Typ dBm	PAE @12GHz Typ dBm	OIP3 @12GHz Typ dBm	Psat @12GHz Typ dBm	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole, y/n	Chip Size um•um
MwT-1F Modelithic Model	MwT-1	70,71,73	10.0	2.0	7.0	26.0	35	37	27.0	630/0.25	single stripe	1,1,2	4.0/100	no	775•260
MwT-3F Modelithic Model	MwT-3	70,71,73	12.0	--	--	22.0	35	32	23.0	300/0.25	single stripe	1,1,2	4.0/100	no	415•260
MwT-5F	MwT-5	71	19.0	3.5	11.0	21.0	35	--	22.0	300•2/0.25	dual gate	3,1,2	4.0/100	no	415•260
MwT-7F Modelithic Model	MwT-7 MwT-S7 MwT-LP7	70,71,73	15.0	2.0	8.0	21.0	35	32	22.0	250/0.25	single stripe	2,2,2	4.0/100	no	365•250
MwT-9F Modelithic Model	MwT-9 MwT-A9	70,71,73	11.0	--	--	26.5	35	35	27.0	750/0.25	Interdigit	1,1,2	4.0/100	no	485•315

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High-Power Amplifier and Oscillator Applications

Excellent reliability with MTBF values better than 1X10⁸ hours at 150C channel temperature.
Ideal for commercial, military, hi-rel space applications.

Model Number S-Parameter	Replaces Part Number	Packages Available	S.S. Gain @8GHz Typ dB	N.F. @8Ghz Typ dB	Ga @ N.F @8GHz Typ dB	P-1dB @8GHz Typ dBm	PAE @8GHz Typ dBm	OIP3 @8GHz Typ dBm	Psat @8GHz Typ dBm	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness (mil/um)	VIA Hole, y/n	Chip Size um•um
MwT-11F Modelithic Model	MwT-11 MwT-17	71	9.0	--	--	32.0	40	42(1)	32.5	2400/0.25	Interdigit	2, 2, 3	4.0/100	no	780•345

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Model Number	Package Available Sealed /Hermetic	Gate Width/Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Max dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-1789	sot89	2400/0.8	Interdigit	4, 4, 5	4, no	--	(3)	18.0(1)	28	44	1130 • 279	Power Amp
MwT-1789SB	sot89	2400/0.8	Interdigit	4, 4, 5	4, no	--	(3)	18.0(1)	28	44	1130 • 279	Power Amp

(1) Tested at Po=25dBm/tone

"End of Life/Legacy GaAs and pHEMT Devices available for Last Time Buy orders. Read Foundry Announcement Here"

The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.

Model Number S-Parameter	Packages Available	Gate Width / Length um	Gate Layout Method	Gate Drain Source Pads	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Chip Size um • um	Ideal Circuit
MwT-PH4	70, 71, 73	180/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	1.2	13.0/12.0	20.0/18.0		356 • 241	Osc & Amp
MwT-PH5		300/0.3	single stripe	1, 1, 2	4, no	18.0 / 15.0	2.0 / -	12.0/ -	20.0/18.0		406 • 241	Power Amp
MwT-PH8	71	1200/0.3	Interdigit	2, 2, 3	4, no	10.0 / 9.0			30.0/29.0		673 • 305	Medium pow
MwT-PH9	70, 71, 73	750/0.3	Interdigit	1, 1, 2	4, no	10.0 / 9.0			27.0/26.0		419 • 292	Power Amp
MwT-PH11	71	2400/0.3	Interdigit	2, 2, 3	4, no	9.0 / 7.0			32.0/30.0	42	775 • 343	Power Amp
MwT-PH16	71	900/0.3	single stripe	6, 2, 7	4, no	11.5 / 10.0			30.0/28.5		1067 • 241	Medium pow
MwT-PH16A		1600/0.25	Interdigit	4, 4, 5	4, no	11.0 / 9.5			31.0 / 29.0		1126 • 330	Medium pow

High-Power, High-Linearity Applications

Ideal for commercial, military, hi-rel space applications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F> @12GHz Typ/Min dBm	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-11	71	2400/0.3	Interdigit	2, 2, 3	4, no	9.0 / 7.0			30.0/28.0		775 • 343	Power Amp
MwT-17Q3	QFN	2400/0.8	Interdigit	4, 4, 5	4, no	18.0/16.0(1)	1.5(1)		28.0/27.0	46	1130 • 279	Power Amp

Broad-Band, Low Noise Figure

Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-4	70, 73 / NA	180/0.3	single stripe	1, 1, 2	5, no	9.0 / 8.0	1.5 / 1.8	9.0 / 8.0	14.0/13.0		356 • 241	Osc & Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	BA/SE Amp
MwT-LP7	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	Oscillator
MwT-9/A9	84, 70, 73 / 71	750/0.3	single stripe	1, 1, 2	5, no	9.5 / 8.5	1.8 / -	6.5 / 6.0	25.5/23.0		419 • 292	FB Amp
MwT-A989	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0(1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp
MwT-A989SB	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0(1)	0.9(1)		25.0/23.0	40	419 • 292	Power Amp

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Broad-Band, High Gain

Recommended for multi-octave applications where maximum gain is the driving parameter.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0	775 • 241	FB Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0	406 • 241	BA Amp
MwT-5	NA / NA	2•300/0.3	dual gate	3, 1, 2	5, no	13.0 / 12.0	3.5 / -	11.0 / -	19.0 / 15.0	406 • 241	Buffer Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0	356 • 241	BA/SE Amp

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Broad-Band, Medium Power

The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ/Min dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um • um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0		775 • 241	FB Amp
MwT-2	70, 73 / 71	630/0.3	single stripe	2, 2, 3	5, no	8.5 / 8.0	- / -	- / -	24.5/23.0		775 • 241	BA Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0		406 • 241	BA Amp
MwT-7 Modelithic Model Non-Linear Model	70, 73 / NA	250/0.3	single stripe	2, 2, 2	5, no	10.5 / 10.0	2.0 / -	8.0 / -	20.0/18.0		356 • 241	BA/SE Amp
MwT-17	89 / 71	2400/0.8	Interdigit	4, 4, 5	5, no	7.0 / 6.0	(2)		29.5/28.5	45/-	1130 • 279	BA/FB Amp
MwT-1789	SOT89	2400/0.8	Interdigit	4, 4, 5	4, no		(4)	16.0(1)	28	46	1130 • 279	Low Noise
MwT-1789SB	SOT89	2400/0.8	Interdigit	4, 4, 5	4, no		(3)	18.0(1)	28	44	1130 • 279	Power Amp

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Narrow-Band Power Applications

Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model S-Parameter	Package Available Sealed / Hermetic	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Min dB	N.F. @12GHz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-2	70, 73 / 71	630/0.3	single stripe	2, 2, 3	5, no	8.5 / 8.0	- / -	- / -	24.5/23.0		775 • 241	BA Amp
MwT-3	70, 73 / 71	300/0.3	single stripe	1, 1, 2	5, no	11.0 / 10.0	- / -	- / -	21.0 / 20.0		406 • 241	BA Amp
MwT-8	71	2400/0.3	Interdigit	2, 2, 3	4, no	7.5 / 7.0			28.0/27.0		673 • 305	Power Amp
MwT-17	89 / 71	2400/0.8	Interdigit	4, 4, 5	5, no	7.0 / 6.0	(2)		29.5/28.5	45 / -	1130 • 279	BA / FB Amp

Narrow-Band, Low Noise Applications

Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model S-Parameter	Package	Gate Width / Length um	Gate Layout Method	Gate Drain Source Bond Pads Qty	Chip Thick-ness & VIA Hole mil, y/n	S.S. Gain @12GHz Typ/Max dB	N.F. @12Ghz Typ/Max dB	Ga @ N.F @12GHz Typ/Min dB	P-1dB @12GHz Typ dBm	IP3 @12GHz Typ dBm	Nominal Chip Size um - um	Ideal Circuit
MwT-1	70, 73 / 71	630/0.3	single stripe	1, 1, 2	5, no	10.0 / 9.0	2.0 / -	7.0 / -	24.0 / 23.0		775 • 241	FB Amp
MwT-4	70, 73 / NA	180/0.3	single stripe	1, 1, 2	5, no	9.0 / 8.0	1.5 / 1.8	9.0 / 8.0	14.0/13.0		356 • 241	Osc & Amp
MwT-9/A9	84, 70, 73 / 71	750/0.3	single stripe	1, 1, 2	5, no	9.5 / 8.5	1.8 / -	6.5 / 6.0	25.5/23.0		419 • 292	FB Amp
MwT-A989	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0 (1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp
MwT-A989SB	SOT89	750/0.5	Interdigit	1, 1, 2	4, no	17.0/15.0ÿ(1)	0.9 (1)		25.0/23.0	40	419 • 292	Power Amp

SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz

Low Noise pHEMT Devices:

Model S-Parameter	Gate Width / Length um	N.F. @12Ghz Typ dB	N.F. @4GHz Typ dB	Ga @ N.F @12GHz Typ/Min dB	Ga @ N.F @4GHz Typ/Min dB	P-1dB @12GHz Typ dBm
MwT-LN180	180/015	0.5	0.2	10 / --	14.5	16
MwT-LN240	240/.15	0.5	0.2	10 / --	13	16
MwT-LN300	300/.15	0.6	0.2	10 / --	13	16
MwT-LN600	600/.15	0.5	0.2	9 / 8	12	20

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