GaAs FET and pHEMT Devices

GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)

  • Ultra Linear, High Dynamic Range, Low Phase Noise
  • GaAs Process is Approved for Space Applications with Proven Reliability
  • Commercial, Industrial, Military, and Space Grade
  • 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
  • 100% Visual Performed (Level 1, 3, or 4) before Shipment
  • 100% Idss Match to Provide Performance Consistency
  • RF Sample Test Capability Available Upon Request
  • Standard and Custom Device Specifications
  • High-Rel and Space-Rel Screening Options Available
  • RoHS (lead-free) Compliant Product Available
  • GaAs FET Application Notes and Drawings.  CLICK HERE

MwT Announcement

MwT utilizes outside foundry to continuously improve our device performance, consistency and quality with competitive cost.  CLICK HERE for more information and a list of the affected devices.

fets_collage

NEW GaAs and pHEMT Devices - Replaces EOL Products LISTED HERE

Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications

  • Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
  • Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
  • Ideal for commercial, military, hi-rel space applications. 
Model Number
S-Parameter
Replaces
Part
Number
Packages
Available
S.S. Gain
@12GHz
Typ dB
PAE
@12GHz
%
OIP3
@12GHz
Typ dBm
Psat
@12GHz
Typ dBm
Gate
Width/Length
um
Gate
Layout
Method
Gate
Drain Source
Pads
Chip Thick-ness
(mil/um)
VIA Hole
y/n
Chip Size
um • um
MwT-PH9F MwT-PH9 70, 71, 73 13.0 45 34 28.0 750/0.25 Interdigit 1,1,2 4.0/100 no 485•315
MwT-PH15F MwT-PH15 71 12.0 45 34 28.5 630/0.25 single stripe 4,2,5 4.0/100 no 785•260
MwT-PH29F RFMD FDP750
BeRex BCP080C
70, 71, 73 13.0 48 35 28.5 800/0.25 Interdigit 1,1,2 4.0/100 no 450•375
MwT-PH30F N/A 70, 71, 73 14.0 45 34 28.0 800/0.25 Interdigit 2,2,3 4.0/100 no 530•375
Model Number
S-Parameter
Replaces
Part
Number
Packages
Available
S.S. Gain
@18GHz
Typ dB
PAE
@18GHz
%
OIP3
@18GHz
Typ dBm
Psat
@18GHz
Typ dBm
Gate
Width/Length
um
Gate
Layout
Method
Gate
Drain Source
Pads
Chip Thick-ness
(mil/um)
VIA Hole
y/n
Chip Size
um • um
MwT-PH3F N/A 70, 71, 73 14.0 50 32 24.0 300/0.25 single stripe 1,1,2 4.0/100 no 425•260
MwT-PH4F MwT-PH4 70, 71, 73 14.0 45 32 24.0 180/0.25 single stripe 1,1,2 4.0/100 no 385•260
MwT-PH7F MwT-PH7 70, 71, 73 15.0 45 30 24.5 250/0.25 single stripe 2,2,2 4.0/100 no 365•260
MwT-PH27F N/A 70, 71, 73 16.0 45 31 25.0 400/0.25 Interdigit 1,1,2 4.0/100 no 340•360
MwT-PH28F N/A 70, 71, 73 13.0 45 32 26.5 600/0.25 Interdigit 1,1,2 4.0/100 no 340•360
MwT-PH33F N/A 70, 71, 73 14.0 45 29 24.0 300/0.25 Interdigit 1,1,2 4.0/100 no 415•315

Narrow and Broad Band High Efficiency Amplifier and High Power Amplifier Applications

  • Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
  • Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
  • Ideal for commercial, military, hi-rel space applications. 
Model Number
S-Parameter
Replaces
Part
Number
Packages
Available
S.S. Gain
@12GHz
Typ dB
PAE
@12GHz
%
OIP3
@12GHz
Typ dBm
Psat
@12GHz
Typ dBm
Gate
Width/Length
um
Gate
Layout
Method
Gate
Drain Source
Pads
Chip Thick-ness
(mil/um)
VIA Hole
y/n
Chip Size
um • um
MwT-PH8F MwT-PH8 71 11.0 42 37 30.0 1200/0.25 Interdigit 2,2,3 4.0/100 no 670•315
MwT-PH11F MwT-PH11 71 12.0 45 40 33.0 2400/0.25 Interdigit 2,2,3 4.0/100 no 780•345
MwT-PH11FV MwT-PH11 71 12.0 45 40 33.0 2400/0.25 Interdigit 2,2,3 4.0/100 yes 780•345
MwT-PH31F N/A 71 13.0 35 30.0 1200/0.25 Interdigit 2,2,3 4.0/100 no 530•375
MwT-PH32F N/A 71 13.0 43 37 30.5 1600/0.25 Interdigit 2,2,3 4.0/100 no 530•376

Narrow and Broad Band Linear Amplifier and Oscillator Applications

  • Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
  • Ideal for commercial, military, hi-rel space applications. 
Model Number
S-Parameter
Replaces
Part
Number
Packages Available S.S. Gain @12GHz Typ dB N.F. @12Ghz Typ dB Ga @ N.F @12GHz Typ dB P-1dB @12GHz Typ dBm PAE @12GHz Typ dBm OIP3 @12GHz Typ dBm Psat @12GHz Typ dBm Gate Width / Length um Gate Layout Method Gate Drain Source Pads Chip Thick-ness (mil/um) VIA Hole, y/n Chip Size um•um
MwT-1F MwT-1 70,71,73 10.0 2.0 7.0 26.0 35 37 27.0 630/0.25 single stripe 1,1,2 4.0/100 no 775•260
MwT-3F MwT-3 70,71,73 12.0 -- -- 22.0 35 32 23.0 300/0.25 single stripe 1,1,2 4.0/100 no 415•260
MwT-5F MwT-5 71 19.0 3.5 11.0 21.0 35 -- 22.0 300•2/0.25 dual gate 3,1,2 4.0/100 no 415•260
MwT-7F MwT-7 MwT-S7 MwT-LP7 70,71,73 15.0 2.0 8.0 21.0 35 32 22.0 250/0.25 single stripe 2,2,2 4.0/100 no 365•250
MwT-9F MwT-9 MwT-A9 70,71,73 11.0 -- -- 26.5 35 35 27.0 750/0.25 Interdigit 1,1,2 4.0/100 no 485•315

High-Power Amplifier and Oscillator Applications

  • Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
  • Ideal for commercial, military, hi-rel space applications. 
Model Number
S-Parameter
Replaces
Part
Number
Packages Available S.S. Gain @8GHz Typ dB N.F. @8Ghz Typ dB Ga @ N.F @8GHz Typ dB P-1dB @8GHz Typ dBm PAE @8GHz Typ dBm OIP3 @8GHz Typ dBm Psat @8GHz Typ dBm Gate Width / Length um Gate Layout Method Gate Drain Source Pads Chip Thick-ness (mil/um) VIA Hole, y/n Chip Size um•um
MwT-11F MwT-11 MwT-17 71 9.0 -- -- 32.0 40 42(1) 32.5 2400/0.25 Interdigit 2, 2, 3 4.0/100 no 780•345

(1) Tested at Po=25dBm/tone

pHEMT MM-Wave Applications and Power pHEMT Devices

The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.

Model Number
S-Parameter
Packages Available Gate Width / Length um Gate Layout Method Gate Drain Source Pads Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Chip Size um • um Ideal Circuit
MwT-PH4 70, 71, 73 180/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 1.2 13.0/12.0 20.0/18.0 356 • 241 Osc & Amp
MwT-PH5 300/0.3 single stripe 1, 1, 2 4, no 18.0 / 15.0 2.0 / - 12.0/ - 20.0/18.0 406 • 241 Power Amp
MwT-PH8 71 1200/0.3 Interdigit 2, 2, 3 4, no 10.0 / 9.0 30.0/29.0 673 • 305 Medium pow
MwT-PH9 70, 71, 73 750/0.3 Interdigit 1, 1, 2 4, no 10.0 / 9.0 27.0/26.0 419 • 292 Power Amp
MwT-PH11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 32.0/30.0 42 775 • 343 Power Amp
MwT-PH16 71 900/0.3 single stripe 6, 2, 7 4, no 11.5 / 10.0 30.0/28.5 1067 • 241 Medium pow
MwT-PH16A 1600/0.25 Interdigit 4, 4, 5 4, no 11.0 / 9.5 31.0 / 29.0 1126 • 330 Medium pow

High-Power, High-Linearity Applications

Ideal for commercial, military, hi-rel space applications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F> @12GHz Typ/Min dBm P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-11 71 2400/0.3 Interdigit 2, 2, 3 4, no 9.0 / 7.0 30.0/28.0 775 • 343 Power Amp
MwT-17Q3 QFN 2400/0.8 Interdigit 4, 4, 5 4, no 18.0/16.0(1) 1.5(1) 28.0/27.0 46 1130 • 279 Power Amp

Broad-Band, Low Noise Figure

Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 356 • 241 Osc & Amp
MwT-7
Modelithic Model

Non-Linear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 BA/SE Amp
MwT-LP7 70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 Oscillator
MwT-9/A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 419 • 292 FB Amp
MwT-A989 SOT89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0(1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp
MwT-A989SB SOT89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0(1) 0.9(1) 25.0/23.0 40 419 • 292 Power Amp

Broad-Band, High Gain

Recommended for multi-octave applications where maximum gain is the driving parameter.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @ 12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0 / 23.0 775 • 241 FB Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0 / 20.0 406 • 241 BA Amp
MwT-5 NA / NA 2•300/0.3 dual gate 3, 1, 2 5, no 13.0 / 12.0 3.5 / - 11.0 / - 19.0 / 15.0 406 • 241 Buffer Amp
MwT-7
Modelithic Model

Non-Linear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 BA/SE Amp

Broad-Band, Medium Power

The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ/Min dBm IP3 @12GHz Typ dBm Nominal Chip Size um • um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0 / 23.0 775 • 241 FB Amp
MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0 775 • 241 BA Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0 / 20.0 406 • 241 BA Amp
MwT-7
Modelithic Model

Non-Linear Model
70, 73 / NA 250/0.3 single stripe 2, 2, 2 5, no 10.5 / 10.0 2.0 / - 8.0 / - 20.0/18.0 356 • 241 BA/SE Amp
MwT-17 89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2) 29.5/28.5 45/- 1130 • 279 BA/FB Amp
MwT-1789 SOT89 2400/0.8 Interdigit 4, 4, 5 4, no (4) 16.0(1) 28 46 1130 • 279 Low Noise
MwT-1789SB SOT89 2400/0.8 Interdigit 4, 4, 5 4, no (3) 18.0(1) 28 44 1130 • 279 Power Amp

Narrow-Band Power Applications

Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Package Available Sealed / Hermetic Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Min dB N.F. @12GHz Typ/Max dB Ga @  N.F @12GHz Typ/Min dB P-1dB @12GHz Typ dBm IP3 @12GHz Typ dBm Nominal Chip Size um - um Ideal Circuit
MwT-2 70, 73 / 71 630/0.3 single stripe 2, 2, 3 5, no 8.5 / 8.0 - / - - / - 24.5/23.0   775 • 241 BA Amp
MwT-3 70, 73 / 71 300/0.3 single stripe 1, 1, 2 5, no 11.0 / 10.0 - / - - / - 21.0 / 20.0 406 • 241 BA Amp
MwT-8 71 2400/0.3 Interdigit 2, 2, 3 4, no 7.5 / 7.0     28.0/27.0   673 • 305 Power Amp
MwT-17 89 / 71 2400/0.8 Interdigit 4, 4, 5 5, no 7.0 / 6.0 (2)   29.5/28.5 45 / - 1130 • 279 BA / FB Amp

Narrow-Band, Low Noise Applications

Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.

Model
S-Parameter
Package Gate Width / Length um Gate Layout Method Gate Drain Source Bond Pads Qty Chip Thick-ness & VIA Hole mil, y/n S.S. Gain @12GHz Typ/Max dB N.F. @12Ghz Typ/Max dB Ga @ N.F @12GHz Typ/Min dB P-1dB @12GHz Typ dBm IP3 @12GHz Typ dBm Nominal Chip Size um - um Ideal Circuit
MwT-1 70, 73 / 71 630/0.3 single stripe 1, 1, 2 5, no 10.0 / 9.0 2.0 / - 7.0 / - 24.0 / 23.0 775 • 241 FB Amp
MwT-4 70, 73 / NA 180/0.3 single stripe 1, 1, 2 5, no 9.0 / 8.0 1.5 / 1.8 9.0 / 8.0 14.0/13.0 356 • 241 Osc & Amp
MwT-9/A9 84, 70, 73 / 71 750/0.3 single stripe 1, 1, 2 5, no 9.5 / 8.5 1.8 / - 6.5 / 6.0 25.5/23.0 419 • 292 FB Amp
MwT-A989 SOT89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0 (1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp
MwT-A989SB SOT89 750/0.5 Interdigit 1, 1, 2 4, no 17.0/15.0ÿ(1) 0.9 (1) 25.0/23.0 40 419 • 292 Power Amp

SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz

Low Noise pHEMT Devices:

Model
S-Parameter
Gate Width / Length um N.F. @12Ghz Typ dB N.F. @4GHz Typ dB Ga @ N.F @12GHz Typ/Min dB Ga @ N.F @4GHz Typ/Min dB P-1dB @12GHz Typ dBm
MwT-LN180 180/015 0.5 0.2 10 / -- 14.5 16
MwT-LN240 240/.15 0.5 0.2 10 / -- 13 16
MwT-LN300 300/.15 0.6 0.2 10 / -- 13 16
MwT-LN600 600/.15 0.5 0.2 9 / 8 12 20