GaAs FET and pHEMT Devices
GaAs FETs / pHEMTs RF Properties (Typical performance at 25°C)
- Ultra Linear, High Dynamic Range, Low Phase Noise
- GaAs Process is Approved for Space Applications with Proven Reliability
- Commercial, Industrial, Military, and Space Grade
- 100% Wafer Bond Pull, Die Shear, Wafer DC Burn In, and Bake Tests in Evaluation per MIL-PRF-38534
- 100% Visual Performed (Level 1, 3, or 4) before Shipment
- 100% Idss Match to Provide Performance Consistency
- RF Sample Test Capability Available Upon Request
- Standard and Custom Device Specifications
- High-Rel and Space-Rel Screening Options Available
- RoHS (lead-free) Compliant Product Available
- GaAs FET Application Notes and Drawings. CLICK HERE

NEW GaAs and pHEMT Devices - Replaces EOL Products LISTED HERE
Narrow and Broad Band High Efficiency Amplifier and Oscillator Applications
- Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @12GHz Typ dB |
PAE @12GHz % |
OIP3 @12GHz Typ dBm |
Psat @12GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
|||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH9F | MwT-PH9 | 70, 71, 73 | 13.0 | 45 | 34 | 28.0 | 750/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 485•315 | |||
MwT-PH15F | MwT-PH15 | 71 | 12.0 | 45 | 34 | 28.5 | 630/0.25 | single stripe | 4,2,5 | 4.0/100 | no | 785•260 | |||
MwT-PH29F | RFMD FDP750 BeRex BCP080C |
70, 71, 73 | 13.0 | 48 | 35 | 28.5 | 800/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 450•375 | |||
MwT-PH30F | N/A | 70, 71, 73 | 14.0 | 45 | 34 | 28.0 | 800/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @18GHz Typ dB |
PAE @18GHz % |
OIP3 @18GHz Typ dBm |
Psat @18GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH3F | N/A | 70, 71, 73 | 14.0 | 50 | 32 | 24.0 | 300/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 425•260 |
MwT-PH4F | MwT-PH4 | 70, 71, 73 | 14.0 | 45 | 32 | 23.0 | 180/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 385•260 |
MwT-PH7F | MwT-PH7 | 70, 71, 73 | 15.0 | 45 | 30 | 24.5 | 250/0.25 | single stripe | 2,2,2 | 4.0/100 | no | 365•260 |
MwT-PH27F | N/A | 70, 71, 73 | 16.0 | 45 | 31 | 25.0 | 400/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 340•360 |
MwT-PH28F | N/A | 70, 71, 73 | 13.0 | 45 | 32 | 26.5 | 600/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 340•360 |
MwT-PH33F | N/A | 70, 71, 73 | 14.0 | 45 | 29 | 24.0 | 300/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 415•315 |
Narrow and Broad Band High Efficiency Amplifier and High Power Amplifier Applications
- Excellent gain, power, and power added efficiency (PAE) and can be used for a wide range of applications up to 26 GHz
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available |
S.S. Gain @12GHz Typ dB |
PAE @12GHz % |
OIP3 @12GHz Typ dBm |
Psat @12GHz Typ dBm |
Gate Width/Length um |
Gate Layout Method |
Gate Drain Source Pads |
Chip Thick-ness (mil/um) |
VIA Hole y/n |
Chip Size um • um |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH8F | MwT-PH8 | 71 | 11.0 | 42 | 37 | 30.0 | 1200/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 670•315 |
MwT-PH11F | MwT-PH11 | 71 | 12.0 | 45 | 40 | 33.0 | 2400/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 780•345 |
MwT-PH11FV | MwT-PH11 | 71 | 12.0 | 45 | 40 | 33.0 | 2400/0.25 | Interdigit | 2,2,3 | 4.0/100 | yes | 780•345 |
MwT-PH31F | N/A | 71 | 13.0 | 44 | 35 | 30.0 | 1200/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
MwT-PH32F | N/A | 71 | 13.0 | 43 | 37 | 30.5 | 1600/0.25 | Interdigit | 2,2,3 | 4.0/100 | no | 530•375 |
Narrow and Broad Band Linear Amplifier and Oscillator Applications
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available | S.S. Gain @12GHz Typ dB | N.F. @12Ghz Typ dB | Ga @ N.F @12GHz Typ dB | P-1dB @12GHz Typ dBm | PAE @12GHz Typ dBm | OIP3 @12GHz Typ dBm | Psat @12GHz Typ dBm | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness (mil/um) | VIA Hole, y/n | Chip Size um•um |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1F
Modelithic Model |
MwT-1 | 70,71,73 | 10.0 | 2.0 | 7.0 | 26.0 | 35 | 37 | 27.0 | 630/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 775•260 |
MwT-3F
Modelithic Model |
MwT-3 | 70,71,73 | 12.0 | -- | -- | 22.0 | 35 | 32 | 23.0 | 300/0.25 | single stripe | 1,1,2 | 4.0/100 | no | 415•260 |
MwT-5F | MwT-5 | 71 | 19.0 | 3.5 | 11.0 | 21.0 | 35 | -- | 22.0 | 300•2/0.25 | dual gate | 3,1,2 | 4.0/100 | no | 415•260 |
MwT-7F
Modelithic Model |
MwT-7 MwT-S7 MwT-LP7 | 70,71,73 | 15.0 | 2.0 | 8.0 | 21.0 | 35 | 32 | 22.0 | 250/0.25 | single stripe | 2,2,2 | 4.0/100 | no | 365•250 |
MwT-9F
Modelithic Model |
MwT-9 MwT-A9 | 70,71,73 | 11.0 | -- | -- | 26.5 | 35 | 35 | 27.0 | 750/0.25 | Interdigit | 1,1,2 | 4.0/100 | no | 485•315 |
High-Power Amplifier and Oscillator Applications
- Excellent reliability with MTBF values better than 1X108 hours at 150C channel temperature.
- Ideal for commercial, military, hi-rel space applications.
Model Number S-Parameter |
Replaces Part Number |
Packages Available | S.S. Gain @8GHz Typ dB | N.F. @8Ghz Typ dB | Ga @ N.F @8GHz Typ dB | P-1dB @8GHz Typ dBm | PAE @8GHz Typ dBm | OIP3 @8GHz Typ dBm | Psat @8GHz Typ dBm | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness (mil/um) | VIA Hole, y/n | Chip Size um•um |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-11F
Modelithic Model |
MwT-11 MwT-17 | 71 | 9.0 | -- | -- | 32.0 | 40 | 42(1) | 32.5 | 2400/0.25 | Interdigit | 2, 2, 3 | 4.0/100 | no | 780•345 |
Model Number |
Package Available Sealed /Hermetic |
Gate Width/Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Max dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit | |||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1789 | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | -- | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp | |||
MwT-1789SB | sot89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | -- | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp |
(1) Tested at Po=25dBm/tone
The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.
Model Number S-Parameter |
Packages Available | Gate Width / Length um | Gate Layout Method | Gate Drain Source Pads | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-PH4 | 70, 71, 73 | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | 1.2 | 13.0/12.0 | 20.0/18.0 | 356 • 241 | Osc & Amp | |
MwT-PH5 | 300/0.3 | single stripe | 1, 1, 2 | 4, no | 18.0 / 15.0 | 2.0 / - | 12.0/ - | 20.0/18.0 | 406 • 241 | Power Amp | ||
MwT-PH8 | 71 | 1200/0.3 | Interdigit | 2, 2, 3 | 4, no | 10.0 / 9.0 | 30.0/29.0 | 673 • 305 | Medium pow | |||
MwT-PH9 | 70, 71, 73 | 750/0.3 | Interdigit | 1, 1, 2 | 4, no | 10.0 / 9.0 | 27.0/26.0 | 419 • 292 | Power Amp | |||
MwT-PH11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 32.0/30.0 | 42 | 775 • 343 | Power Amp | ||
MwT-PH16 | 71 | 900/0.3 | single stripe | 6, 2, 7 | 4, no | 11.5 / 10.0 | 30.0/28.5 | 1067 • 241 | Medium pow | |||
MwT-PH16A | 1600/0.25 | Interdigit | 4, 4, 5 | 4, no | 11.0 / 9.5 | 31.0 / 29.0 | 1126 • 330 | Medium pow |
High-Power, High-Linearity Applications
Ideal for commercial, military, hi-rel space applications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F> @12GHz Typ/Min dBm | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-11 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 9.0 / 7.0 | 30.0/28.0 | 775 • 343 | Power Amp | |||
MwT-17Q3 | QFN | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | 18.0/16.0(1) | 1.5(1) | 28.0/27.0 | 46 | 1130 • 279 | Power Amp |
Broad-Band, Low Noise Figure
Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
MwT-LP7 | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | Oscillator | |
MwT-9/A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
MwT-A989 | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
MwT-A989SB | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0(1) | 0.9(1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
Broad-Band, High Gain
Recommended for multi-octave applications where maximum gain is the driving parameter.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @ 12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-5 | NA / NA | 2•300/0.3 | dual gate | 3, 1, 2 | 5, no | 13.0 / 12.0 | 3.5 / - | 11.0 / - | 19.0 / 15.0 | 406 • 241 | Buffer Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp |
Broad-Band, Medium Power
The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ/Min dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um • um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-7
Modelithic Model Non-Linear Model | 70, 73 / NA | 250/0.3 | single stripe | 2, 2, 2 | 5, no | 10.5 / 10.0 | 2.0 / - | 8.0 / - | 20.0/18.0 | 356 • 241 | BA/SE Amp | |
MwT-17 | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45/- | 1130 • 279 | BA/FB Amp | |
MwT-1789 | SOT89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (4) | 16.0(1) | 28 | 46 | 1130 • 279 | Low Noise | |
MwT-1789SB | SOT89 | 2400/0.8 | Interdigit | 4, 4, 5 | 4, no | (3) | 18.0(1) | 28 | 44 | 1130 • 279 | Power Amp |
Narrow-Band Power Applications
Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
Model S-Parameter |
Package Available Sealed / Hermetic | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Min dB | N.F. @12GHz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-2 | 70, 73 / 71 | 630/0.3 | single stripe | 2, 2, 3 | 5, no | 8.5 / 8.0 | - / - | - / - | 24.5/23.0 | 775 • 241 | BA Amp | |
MwT-3 | 70, 73 / 71 | 300/0.3 | single stripe | 1, 1, 2 | 5, no | 11.0 / 10.0 | - / - | - / - | 21.0 / 20.0 | 406 • 241 | BA Amp | |
MwT-8 | 71 | 2400/0.3 | Interdigit | 2, 2, 3 | 4, no | 7.5 / 7.0 | 28.0/27.0 | 673 • 305 | Power Amp | |||
MwT-17 | 89 / 71 | 2400/0.8 | Interdigit | 4, 4, 5 | 5, no | 7.0 / 6.0 | (2) | 29.5/28.5 | 45 / - | 1130 • 279 | BA / FB Amp |
Narrow-Band, Low Noise Applications
Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
Model S-Parameter |
Package | Gate Width / Length um | Gate Layout Method | Gate Drain Source Bond Pads Qty | Chip Thick-ness & VIA Hole mil, y/n | S.S. Gain @12GHz Typ/Max dB | N.F. @12Ghz Typ/Max dB | Ga @ N.F @12GHz Typ/Min dB | P-1dB @12GHz Typ dBm | IP3 @12GHz Typ dBm | Nominal Chip Size um - um | Ideal Circuit |
---|---|---|---|---|---|---|---|---|---|---|---|---|
MwT-1 | 70, 73 / 71 | 630/0.3 | single stripe | 1, 1, 2 | 5, no | 10.0 / 9.0 | 2.0 / - | 7.0 / - | 24.0 / 23.0 | 775 • 241 | FB Amp | |
MwT-4 | 70, 73 / NA | 180/0.3 | single stripe | 1, 1, 2 | 5, no | 9.0 / 8.0 | 1.5 / 1.8 | 9.0 / 8.0 | 14.0/13.0 | 356 • 241 | Osc & Amp | |
MwT-9/A9 | 84, 70, 73 / 71 | 750/0.3 | single stripe | 1, 1, 2 | 5, no | 9.5 / 8.5 | 1.8 / - | 6.5 / 6.0 | 25.5/23.0 | 419 • 292 | FB Amp | |
MwT-A989 | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0 (1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp | |
MwT-A989SB | SOT89 | 750/0.5 | Interdigit | 1, 1, 2 | 4, no | 17.0/15.0ÿ(1) | 0.9 (1) | 25.0/23.0 | 40 | 419 • 292 | Power Amp |
SB = Self-Biased (1) @ 2.0GHz, (2) noise figure = 0.8dB @ 0.9Ghz, (3) noise figure = 3.0dB @ 2.0Ghz, (4) noise figure = 1.3dB @ 2.0Ghz, (5) @ 4.0Ghz
Low Noise pHEMT Devices:
Model S-Parameter |
Gate Width / Length um | N.F. @12Ghz Typ dB | N.F. @4GHz Typ dB | Ga @ N.F @12GHz Typ/Min dB | Ga @ N.F @4GHz Typ/Min dB | P-1dB @12GHz Typ dBm |
---|---|---|---|---|---|---|
MwT-LN180 | 180/015 | 0.5 | 0.2 | 10 / -- | 14.5 | 16 |
MwT-LN240 | 240/.15 | 0.5 | 0.2 | 10 / -- | 13 | 16 |
MwT-LN300 | 300/.15 | 0.6 | 0.2 | 10 / -- | 13 | 16 |
MwT-LN600 | 600/.15 | 0.5 | 0.2 | 9 / 8 | 12 | 20 |