More Product Information
GaAs FET and pHEMT Devices
APPLICATION NOTES AND SCREENING DOWNLOADS
- MwT GaAs Device Technology.
- Evaluation of the Effects of Hydrogen on MwT Fets.
- Package Application Notes (70, 71, 73). Some products also available in NEW SOT89 package.
- Visual Level 1 Criteria - Commercial Applications.
- Visual Level 3 Criteria - Military Standard Applications.
- Device Handling Procedure, Idss Bin Selection Instructions, Idss Bin Accuracy.
- MwT-LP7 Low Phase Noise Application Notes for DRO Applications
- MwT Standard Wafer Evaluation Procedure
- MwT-1789HL Application Note
- MwT-1789LN Application Note
- MwT-17Q3 Application Note
- MTBF Plot For MwT GaAs Fets
GaAs FETs / pHEMTs DC Properties (Typical performance at 25°C)
pHEMT MM-Wave Applications and Power pHEMT Devices
The following are AlGaAs/InGaAs heterojunction pHEMT (Pseudomorphic High Electron Mobility Transistor) devices, best suited for mm-wave power and gain applications.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-PH4 | pHEMT | 18 / 66 | 2.5 / 0.0 | 56 / 36 | 3.0 / 1.0 | 1.2 / 2.5 | 0.4 | 12.0 / 6.0 | 0.4 | 12.0 / 8.0 | 7.0 | 210 | |
| MwT-PH5 | pHEMT | 40 / 120 | 2.5 / 0.0 | 60 / 40 | 3.0 / 2.0 | 1.2 / 2.5 | 0.4 | 12.0 / 6.0 | 0.4 | 13.0 / 10.0 | 7.0 | 150 | |
| MwT-PH7 | pHEMT | 50 / 122 | 4 | 2.5 / 0.0 | 80 / 50 | 3.0 / 1.0 | 1.2 / 2.5 | 0.4 | 12.0 / 6.0 | 0.4 | 12.0 / 8.0 | 7.0 | 150 |
| MwT-PH8 | pHEMT | 240 / 600 | 20 | 2.5 / 0.0 | 320 / 240 | 3.0 / 8.0 | 1.2 / 2.5 | 1.2 | 12.0 / 6.0 | 1.2 | 13.0 / 10.0 | 8.0 |
40 |
| MwT-PH9 | pHEMT | 120 / 292 | 2.5 / 0.0 | 200 / 150 | 3.0 / 5.0 | 1.2 / 2.5 | 1.0 | 12.0 / 6.0 | 1.0 | 13.0 / 10.0 | 8.0 | 56 | |
| MwT-PH11 | pHEMT | 440 / 800 | 2.0 / 0.0 | 800 / 450 | 3.0 / 16.0 | 1.2 / 2.5 | 2.4 | 12.0 / 6.0 | 2.4 | 13.0 / 10.0 | 8.0 | 24 | |
| MwT-PH15 | pHEMT | 120 / 240 | 10 | 2.5 / 0.0 | 200 / 130 | 3.0 / 2.0 | 1.2 / 2.5 | 1.0 | 12.0 / 6.0 | 1.0 | 13.0 / 10.0 | 8.0 | 65 |
| MwT-PH16 | pHEMT | 150 / 360 | 15 | 2.5 / 0.0 | 280 / 180 | 3.0 / 3.0 | 1.2 / 2.5 | 1.0 | 12.0 / 6.0 | 1.0 | 13.0 / 10.0 | 8.0 | 45 |
| MwT-PH16A | pHEMT | 300 / 600 | 50 | 2.0 / 0.0 | 400 / 300 | 3.0 / 2.0 | 1.2 / 2.5 | 2.0 | 8.0 / 6.0 | 2.0 | 13.0 / 10.0 | 9.0 | 30 |
High-Power, High-Linearity Applications
Ideal for commercial, military, hi-rel space applications.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT- 11 | MESFET | 240 / 920 | 40 | 2.5 / 0.0 | 380 / 290 | 3.0 / 16.0 | 2.0 / 5.0 | 2.4 | 12.0 / 8.0 | 2.4 | 12.0 / 8.0 | 8.0 | 28 |
| MESFET | 440 / 680 | 2.5 / 0.0 | 380 | 3.0 / 16.0 | 2.0 / 5.0 | 2.4 | 12.0 / 6.0 | 2.4 | 12.0 / 9.0 | 8.0 | 35 |
Broad-Band, Low Noise Figure
Recommended for multi-octave applications where low noise figure is the driving parameter.
The MwT-A9 was designed for applications where both high gain and low noise figure are key specifications.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-4 | MESFET | 18 / 66 | 3 | 3.0 / 0.0 | 35 / 27 | 3.0 / 1.0 | 1.5 / 4.0 | 0.2 | 8.0 / 5.0 | 0.2 | 8.0 / 6.0 | 6.0 | 250 |
|
MwT-7
Nonlinear Model |
MESFET | 26 / 98 | 4 | 3.0 / 0.0 | 45 / 36 | 3.0 / 1.0 | 1.5 / 4.5 | 0.4 | 8.0 / 5.0 | 0.4 | 8.0 / 6.0 | 6.0 | 180 |
| MwT-LP7 | MESFET | 38 / 98 | 4 | 3.0 / 0.0 | 45 / 36 | 3.0 / 1.0 | 1.5 / 4.5 | 0.4 | 8.0 / 5.0 | 0.4 | 8.0 / 6.0 | 6.0 | 180 |
| MwT-9/A9 | MESFET | 78 / 282 | 12 | 2.0 / 0.0 | 120 / 95 | 3.0 / 5.0 | 2.0 / 5.0 | 1..0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 6.0 | 70 |
| MwT-A989 | MESFET | 100 / 200 | 2.0 / 0.0 | 90 / 120 | 3.0 / 5.0 | 2.5 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 8.0 | 75 | |
| MwT-A989SB | MESFET | 100 / 200 | 2.0 / 0.0 | 90 / 120 | 3.0 / 5.0 | 2.5 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 8.0 | 75 |
Broad-Band, High Gain
Recommended for multi-octave applications where maximum gain is the driving parameter.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-1 | MESFET | 60 / 240 | 10 | 4.0 / 0.0 | 120 / 90 | 3.0 / 4.0 | 2.0 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 6.0 | 80 |
| MwT-3 | MESFET | 30 / 120 | 5 | 4.0 / 0.0 | 55 / 35 | 3.0 / 2.0 | 2.0 / 5.0 | 0.2 | 12.0 / 6.0 | 0.2 | 12.0 / 8.0 | 7.0 | 150 |
| MwT-5 | MESFET | 30 / 110 | 5 | 2.0 / 0.0 | 40 / 23 | 3.0 / 0.0 | 2.0 / 4.5 | 0.4 | 8.0 / 5.0 | 0.4 | 10.0 / 7.0 | 6.5 | 150 |
|
MwT-7
Nonlinear Model |
MESFET | 26 / 98 | 4 | 3.0 / 0.0 | 45 / 36 | 3.0 / 1.0 | 1.5 / 4.5 | 0.4 | 8.0 / 5.0 | 0.4 | 8.0 / 6.0 | 6.0 | 180 |
Broad-Band, Medium Power
The following devices are recommended for multi-octave applications where optimum power output is the driving parameter.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-1 | MESFET | 60 / 240 | 10 | 4.0 / 0.0 | 120 / 90 | 3.0 / 4.0 | 2.0 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 6.0 | 80 |
| MwT-2 | MESFET | 60 / 240 | 10 | 4.0 / 0.0 | 100 / 75 | 3.0 / 4.0 | 2.0 / 5.0 | 0.4 | 12.0 / 6.0 | 0.4 | 12.0 / 8.0 |
7.0 | 80 |
| MwT-3 | MESFET | 30 / 120 | 5 | 4.0 / 0.0 | 55 / 35 | 3.0 / 2.0 | 2.0 / 5.0 | 0.2 | 12.0 / 6.0 | 0.2 | 12.0 / 8.0 | 7.0 | 150 |
|
MwT-7
Nonlinear Model | MESFET | 26 / 98 | 4 | 3.0 / 0.0 | 45 / 36 | 3.0 /1.0 | 1.5 / 4.5 | 0.4 | 8.0 / 5.0 |
0.4 | 8.0 / 6.0 | 6.0 | 180 |
| MwT-8 | MESFET | 120 / 480 | 20 | 2.5 / 0.0 | 160 / 144 | 3.0 / 5.0 | 2.0 / 5.0 | 1.2 | 12.0 / 8.0 | 1.2 | 12.0 / 8.0 |
7.5 | 45 |
|
MwT-17
Nonlinear Model | MESFET | 240 / 920 | 40 | 2.0 / 0.0 | 380 / 290 | 3.0 / 6.0 | 2.5 / 5.0 | 1.6 | 12.0 / 6.0 | 1.6 | 12.0 / 8.0 | 7.0 | 33 |
| MwT-1789 | MESFET | 440 / 680 | 2.5 / 0.0 | 380 | 3.0 / 16.0 | 2.0 / 5.0 | 2.4 | 12.0 / 6.0 | 2.4 | 12.0 / 9.0 | 8.0 | 35 | |
| MwT-1789SB | MESFET | 440 / 680 | 2.0 / 0.0 | 380 | 3.0 / 16.0 | 2.5 / 5.0 | 2.4 | 12.0 / 6.0 | 2.4 | 12.0 / 9.0 | 8.0 | 30 |
Narrow-Band Power Applications
Recommended for narrow-band applications where maximum power output and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-2 | MESFET | 60 / 240 | 10 | 4.0 / 0.0 | 100 / 75 | 3.0 / 4.0 | 2.0 / 5.0 | 0.4 | 12.0 / 6.0 | 0.4 | 12.0 / 8.0 | 7.0 | 80 |
| MwT-3 | MESFET | 30 / 120 | 5 | 4.0 / 0.0 | 55 / 35 | 3.0 / 2.0 | 2.0 / 5.0 |
0.2 | 12.0 / 6.0 | 0.2 | 12.0 / 8.0 | 7.0 | 150 |
| MwT-8 | MESFET | 120 / 480 | 20 | 2.5 / 0.0 | 160 / 144 | 3.0 / 5.0 | 2.0 / 5.0 | 1.2 | 12.0 / 8.0 | 1.2 | 12.0 / 8.0 | 7.5 | 45 |
|
MwT-17
Nonlinear Model |
MESFET | 240 / 920 | 40 | 2.0 / 0.0 | 380 / 290 | 3.0 / 6.0 | 2.0 / 5.0 | 1.6 | 12.0 / 6.0 | 1.6 | 12.0 / 8.0 | 7.0 | 33 |
Narrow-Band, Low Noise Applications
Recommended for narrow-band applications where low noise and gain are the driving parameters. These devices can be biased at 5 volts for wireless communications applications.
| Model S-Parameter |
Device Type | Idss Range Min/Max mA | Idss Range in Each container mA | Gm Tested at Vds / Vgs V/V |
Gm Typ / Min mS | Vp Tested at Vds / Ids V/ mA | Vp Typ / Max (-V) | Bvgso Tested at Igs (-mA) | Bvgso Typ / Min (-V) | Bvgdo Tested at Igd (-mA) | Bvgdo Typ / Min V/V | Vds Absolute Max V | Chip Rth Typ 0C/W |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MwT-1 | MESFET | 60 / 240 | 10 | 4.0 / 0.0 | 120 / 90 | 3.0 / 4.0 | 2.0 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 6.0 | 90 |
| MwT-4 | MESFET | 18 / 66 | 3 | 3.0 / 0.0 | 35 / 27 | 3.0 / 1.0 | 1.5 / 4.0 | 0.2 | 8.0 / 5.0 | 0.2 | 8.0 / 6.0 | 6.0 | 250 |
| MwT-9/A9 | MESFET | 78 / 282 | 12 | 2.0 / 0.0 | 120 / 95 | 3.0 / 5.0 | 2.0 / 5.0 | 1.0 | 10. 0 / 5.0 | 1.0 | 10. 0 / 6.0 | 6.0 | 70 |
| MwT-A989 | MESFET | 100 / 200 | 2.0 / 0.0 | 90 / 120 | 3.0 / 5.0 | 2.5 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 8.0 | 75 | |
| MwT-A989SB | MESFET | 100 / 200 | 2.0 / 0.0 | 90 / 120 | 3.0 / 5.0 | 2.5 / 5.0 | 1.0 | 10.0 / 5.0 | 1.0 | 10.0 / 6.0 | 8.0 | 75 |